Abstract:Real-time monitoring and control of epitaxial growth has been recognized as an enabling technology for volume manufacturing of epitaxial-based compound semiconductor optoelectronic and electronic devices (lasers, microwave transistors etc.). Conventional approach which is based on pre-growth calibration does not allow real-time compensation for the drift of process parameters that occurs during the growth process (growth time varies from I to 10 hours). By monitoring the deposited material directly and continuously, the new approach in this thesis based on model-reference system and least square phase not only ensure higher growth reproducibility, but also eliminate calibration runs completely. To date, in situ non-invasive normal incidence laser reflectance, pyrometric interferometry and diffused reflection spectroscopy are increasing being used for in situ growth calibrations for both molecular beam epitaxy and metal-organic vapor phase deposition growths. The physical original of non-invasive normal incidence laser reflectance, pyrometric interferometry, diffused reflectance spectroscopy has been studied. The interpretation of sample temperature from the measured diffused reflectance spectroscopy spectrum is influenced by interference effect in the heterostructure. The compensation algorithm with the aid of curvature has been investigated. And our experiments have discovered that temperature drift during MBE growth of heterostructures is caused by change of sample emissivity as well as radiative heating from the Knudsen cells. The identification of these mechanisms will lead to a more precise modeling of sensor signal and thus improving the performance of the closed-loop control system. Using ‘signal phase’ and a model-reference system, we have achieved continuous growth rate estimation with thickness resolution of 30 nm on both Pyrometric Interferometry (PI) and Laser Reflectance (LR). This is nearly five-fold improvement over the previous technique. This new method also achieved improved accuracy (thickness error < 2%) over conventional methods (error ∼4–7%). In addition, the new method shows excellent dynamic tracking of growth rate when the growth rate is intentionally changed by as much as 18%. Finally, the automation of MBE system and measurement synchronization during wafer rotation are also designed and investigated in this thesis.

In-Situ Monitoring Technology for Growth of III Nitrides by Metal Organic Chemical Vapor Deposition

Electron cyclotron resonance plasma enhanced metalorganic chemical vapor deposition system with monitoring in situ for epitaxial growth of group-III nitrides

Epitaxial Growth of Ⅲ Nitrides and Relevant Devices on Metal-Based Substrates

Kinetic Monte Carlo Study Of Metal Organic Chemical Vapor Deposition Growth Dynamics Of Gan Thin Film At Microscopic Level

III-nitride Epitaxy by Ion Filtered Inductively Coupled Plasma MOCVD

Non-Destructive and Whole Wafer Characterization of III-V Infrared Epitaxial Materials Prepared by Turbo Disk Metalorganic Chemical Vapor Deposition

Recent Progress in Metal-Organic Chemical Vapor Deposition of (000(1)Over-Bar) N-Polar Group-Iii Nitrides

Intelligent Monitoring and Control System During Molecular Beam Epitaxy Growth

Real-time Monitoring of 2D Semiconductor Film Growth with Optical Spectroscopy

Numerical simulation study on growth rate and gas reaction path of InN-MOCVD with Close-Coupled showerhead reactor

Development of in situ characterization techniques in molecular beam epitaxy

Recent Advances in Metal-Organic Chemical Vapor Deposition

Scanning tunneling microscopy studies of III-nitride thin film heteroepitaxial growth

Development of <i>in situ</i> characterization techniques in molecular beam epitaxy

Vapor Growth of III Nitrides

Epitaxy of III-nitrides on Two-Dimensional Materials and Its Applications

Gas supply system for growth of high quality InGaN/GaN multi-quantum-wells by metal organic chemical vapor deposition

In-situ Laser Interference Patterning of MBE Growth Surfaces

Dislocations/Defects analysis in III-V nitrides - a cost effective MOCVD epitaxy solution

Vapor-Phase Precise-Synthesis of 2D Inorganic Materials for Optoelectronics

Metalorganic Chemical Vapor Deposition of Non-polar III-Nitride Films over A-Plane SiC Substrates