Abstract:A mechanistic understanding of interactions be-tween atomically thin two-dimensional (2D) transition-metal dichalcogenides (TMDs) and their growth substrates is important for achieving the unidirectional alignment of nuclei and seamless stitching of 2D TMD domains and thus 2D wafers. In this work, we conduct a cross-sectional scanning transmission electron microscopy (STEM) study to investigate the atomic-scale nucleation and early stage growth behaviors of chemical vapor deposited monolayer (ML-) MoS2 and molecular beam epitaxy ML-MoSe2 on a Au(111) substrate. Statistical analysis reveals the majority of as-grown domains, i.e., similar to 88% for MoS2 and 90% for MoSe2, nucleate on surface terraces, with the rest (i.e., similar to 12% for MoS2 and 10% for MoSe2) on surface steps. Moreover, within the latter case, step-associated nucleation, similar to 64% of them are terminated with a Mo-zigzag edge in connection with the Au surface steps, with the rest (similar to 36%) being S-zigzag edges. In conjunction with ab initio density functional theory calculations, the results confirm that van der Waals epitaxy, rather than the surface step guided epitaxy, plays deterministic roles for the realization of unidirectional ML-MoS2 (MoSe2) domains on a Au(111) substrate. In contrast, surface steps, particularly their step height, are mainly responsible for the integrity and thickness of MoS2/MoSe2 films. In detail, it is found that the lateral growth of monolayer thick MoS2/MoSe2 domains only proceeds across mono-Au-atom high surface steps (similar to 2.4 angstrom), but fail for higher ones (bi-Au atom step and higher) during the growth. Our cross-sectional STEM study also confirms the existence of considerable compressive residual strain that reaches similar to 3.0% for ML-MoS2/MoSe2 domains on Au(111). The present study aims to understand the growth mechanism of 2D TMD wafers.

Real-time Monitoring of 2D Semiconductor Film Growth with Optical Spectroscopy

Direct observation of the CVD growth of monolayer MoS$_2$ using $in-situ$ optical spectroscopy

Atomistic Insight into the Epitaxial Growth Mechanism of Single-Crystal Two-Dimensional Transition-Metal Dichalcogenides on Au(111) Substrate

Wafer‐scale Single‐crystalline MoSe2 and WSe2 Monolayers Grown by Molecular‐beam Epitaxy at Low‐temperature — the Role of Island‐substrate Interaction and Surface Steps

An In Situ Reflectance Spectroscopic Investigation to Monitor Two-Dimensional MoS2 Flakes on a Sapphire Substrate

In Situ Studies on the Influence of Surface Symmetry on the Growth of MoSe2 Monolayer on Sapphire Using Reflectance Anisotropy Spectroscopy and Differential Reflectance Spectroscopy

In situ laser reflectivity to monitor and control the nucleation and growth of atomically thin 2D materials*

Development of in Situ Characterization of Two-Dimensional Materials Grown on Insulator Substrates with Spectroscopic Photoemission and Low Energy Electron Microscopy

Pulsed laser deposition with simultaneous in situ real-time monitoring of optical spectroscopic ellipsometry and reflection high-energy electron diffraction

Step-edge Controlled Fast Growth of Wafer-Scale MoSe2 Films by MOCVD

Low wavenumber Raman spectroscopy of highly crystalline MoSe2 grown by chemical vapor deposition

Direct observation of the transition from indirect to direct bandgap in atomically thin epitaxial MoSe2

Controllable Growth of Multilayered XSe2 (X = W and Mo) for Nonlinear Optical and Optoelectronic Applications

Precise Construction and Growth of Submillimeter Two-Dimensional WSe2 and MoSe2 Monolayers

Chemical Vapor Deposition of 4 Inch Wafer‐Scale Monolayer MoSe2

Halide Vapor Phase Epitaxy of Monolayer Molybdenum Diselenide Single Crystals

Epitaxial growth of atomically thin Ga2Se2 films on c-plane sapphire substrates

Controllable growth of multilayered XSe 2 (X = W and Mo) for nonlinear optical and optoelectronic applications

Real time optical observation and control of atomically thin transition metal dichalcogenide synthesis

Large Area Automated Characterisation of Chemical Vapour Deposition Grown Monolayer Transition Metal Dichalcogenides Through Photoluminescence Imaging

Substrates and Interlayer Coupling Effects on Mo1−xWxSe2 Alloys