Progress in Porous Silicon Sensors

崔昊杨,李宏建,谢自芳,赵楚军,彭景翠

DOI: https://doi.org/10.3321/j.issn:1005-023X.2004.03.011

2004-01-01

Abstract:Some aspects of porous silicon sensors are discussed in this paper, including their fabrication methods and sensitivity characteristics, with focus on the principle of gas sensors, humidity sensors and biosensors. New trends in this area are also reviewed.

What problem does this paper attempt to address?

The Research on the Gas Sensor Based on LAPS and Nanometer Porous Silicon

ZONG Xiao-lin,CAI Hua,YU Hui,WANG Ping

DOI: https://doi.org/10.3969/j.issn.1004-1699.2006.05.219

2006-01-01

Abstract:A new kind of sensor for gas test based on the method of light addressable potentiometric sensor(LAPS) and porous silicon technique is developed. Combined with the MicroElectro Mechanical System (MEMS) techniques for the LAPS fabrication and the characteristics of this kind of planar apparatus, a new way for the detection of gases released during the metabolism of cells is attainable. From some primary results, it is shown that, the sensor had relatively evident response to alcohol gas under the room temperature, along with some concentration gradient characteristics. The feasibility of the design of this kind of sensor is proved.
Study on Fabrication of Porous Silicon Gas Sensor and Gas Sensing-characteristics

Dong-hai LI,Ming HU,Feng-yun SUN,Peng CHEN,Peng SUN

DOI: https://doi.org/10.3969/j.issn.1001-4381.2009.04.017

2009-01-01

Abstract:Double-cell electrochemical etching was used to prepare PS based on P+ type and the principle and advantages of porous silicon gas sensor were presented. The film morphology was characterized by SEM and AFM. The sensing-characteristic of PS films was studied in terms of different of porosities. The results show that the response/recovery time of PS thin films decreases with increasing the current density and the PS thin film reveals excellent sensitivity and response characteristics in the presence of low concentration of 0.1 × 10 -5-6 × 10 -5 NO 2 gas in air.
A Zinc Oxide modified Porous Silicon humidity sensor

Tao Jiang,Xiaofeng Zhou,Jian Zhang,YanLing Shi,Tianxing Luo

DOI: https://doi.org/10.1109/ICIA.2006.305909

2006-01-01

Abstract:In this paper, a relative humidity sensor based on zinc oxide modified porous silicon was discussed. The porous silicon was prepared by electrochemical etching process first. Then the sol-gel precursor of Zinc Oxide was applied to the PS substrates and annealed at 450 degC. By this technique, it is possible to obtain a uniform zinc oxide film on the porous silicon substrates. The electrical conductivities of the porous silicon and zinc oxide/porous silicon structures under different humidity levels were measured. It is indicated that the modification of the porous silicon by sol-gel zinc oxide increase the sensitivity and shorten the response time to the relative humidity
A New Method for Improving Sensing Characteristics of Porous Silicon

李宏建,崔昊杨,黄伯云,易丹青,何英旋,彭景翠

DOI: https://doi.org/10.3969/j.issn.1004-5929.2004.01.019

2004-01-01

Abstract:The luminescence quenching effect of porous Si caused by adsorbing organic moleculars are investigated. It indicates that the solvent molecules of quenching luminescence are polarized molecules and the different polarity determines the different quenching, and the quenching caused by molecules absorbed of oxide porous Si has better reversibility and selectivity than that of porous Si. By using n-butylamine as carbon resource, carbon-nitrogen(c-n) film was deposited on the p-n junction(p-n) porous Si surface by means of a radio-frequency glow discharge plasma system. Electroluminescence (EL) intensity enhancement and EL peak blueshift of the passivated porous Si are observed experimentally. Further, the intensity decay and the peak blueshift of porous Si are not observed after storing 60 days in the atmosphere. The current-voltage characteristics show that the series resistance Rs and driven voltage in the ITO/c-n/p-n porous Si diode is reduced greatly compared with the ITO/p-n porous Si diode. It provides a new method for improving sensing characteristics of porous Si.
Physical analysis of the response properties of porous silicon microcavity biosensor

Chao Wu,Guoguang Rong,Junteng Xu,Shengfei Pan,Yongxin Zhu

DOI: https://doi.org/10.1016/j.physe.2011.12.019

2012-01-01

Physicae

Abstract:Porous silicon possesses great potential in developing label-free biosensors of high sensitivity. In this work, a well-tuned resonant structure or microcavity is fabricated, and based on it, an intensity-interrogated sensing technique is thoroughly investigated. Using glucose as a target, this method is demonstrated to be advantageous in lowering detection limit while achieving high reliability. In this experiment the limit is extended from approximately 7 x 10(-4)RIU to 7 x 10(-5)RIU, compared with the redshift method. we also elaborate the physical mechanisms in the sensing process, which give rise to the aberration of reflectivity variation when different procedures (i.e. dynamic vs. static) are executed. It is postulated to be caused by concentration profile change in diffusion boundary layer in response to flow rate difference. We also find that the response time keeps a steady low value before ramping up in extremely low concentration sensing schemes. We arbitrarily cut the response time vs. concentration curve into two regimes, which are dominated by relatively high adsorption rate and slow mass diffusion. In the last part, tailing effect is investigated and eliminated by increasing flow rate. The theory will be instructive in achieving optimum results in operations where physisorption in the porous material plays an important role. (C) 2012 Elsevier B.V. All rights reserved.
A breathable, sensitive and wearable piezoresistive sensor based on hierarchical micro-porous PU@CNT films for long-term health monitoring

Yin He,Liduan Zhao,Jianglu Zhang,Liyan Liu,Hao Liu,Li Liu

DOI: https://doi.org/10.1016/j.compscitech.2020.108419

IF: 9.1

2020-11-01

Composites Science and Technology

Abstract:Creating highly sensitive and comfortable flexible sensors remain a key challenge in the development of electronic-skin. A breathable, sensitive and long-term wearable piezoresistive sensor based on hierarchical micro-porous films and a single-sided electrode were prepared by simple and effective methods. Distilled water is used as a non-solvent to induce the separation of films polyurethane (PU) to create the hierarchical porous structures. The micro-computed tomography is used to quantitatively analyze the 3D structure of the porous films with different PU concentration, which is, a small pore volume of less than 50 μm3 occupy the majority, the porosities are from 64.25% to 40.27%, and the surface areas are of 5.6×106 to 12.0×106μm2. Such micro-porous structures performs the air and moisture permeability of the films and the sensors which are more than 8 times that of non-porous film, and effectively improves the sensitivity of the sensors to 51.53 kPa-1. The hysteresis error of the porous sensor which possesses a higher specific surface area and lower porosity is optimized by 67.8% and it has high stability (>8000 cycles). Finally, the sensors were successfully to detecting article pulse waves, throat and finger movements, and spatially resolved pressure.

materials science, composites
Nanoscale morphology, optical dynamics and gas sensor of porous silicon

Atefeh Ghaderi,Jamshid Sabbaghzadeh,Laya Dejam,Ghobad Behzadi Pour,Emad Moghimi,Robert S. Matos,Henrique Duarte da Fonseca Filho,Ștefan Țălu,Amirhossein Salehi shayegan,Leila Fekri Aval,Mahdi Astani Doudaran,Amirhossein Sari,Shahram Solaymani

DOI: https://doi.org/10.1038/s41598-024-54336-x

IF: 4.6

2024-02-16

Scientific Reports

Abstract:We investigated the multifaceted gas sensing properties of porous silicon thin films electrodeposited onto (100) oriented P-type silicon wafers substrates. Our investigation delves into morphological, optical properties, and sensing capabilities, aiming to optimize their use as efficient gas sensors. Morphological analysis revealed the development of unique surfaces with distinct characteristics compared to untreated sample, yielding substantially rougher yet flat surfaces, corroborated by Minkowski Functionals analysis. Fractal mathematics exploration emphasized that despite increased roughness, HF/ethanol-treated surfaces exhibit flatter attributes compared to untreated Si sample. Optical approaches established a correlation between increased porosity and elevated localized states and defects, influencing the Urbach energy value. This contributed to a reduction in steepness values, attributed to heightened dislocations and structural disturbances, while the transconductance parameter decreases. Simultaneously, porosity enhances the strength of electron‒phonon interaction. The porous silicon thin films were further tested as effective gas sensors for CO 2 and O 2 vapors at room temperature, displaying notable changes in electrical resistance with varying concentrations. These findings bring a comprehensive exploration of some important characteristics of porous silicon surfaces and established their potential for advanced industrial applications.

multidisciplinary sciences
Porous Silicon Based on Multilayer Dielectric‐grating Optical Sensors with Enhanced Biosensing

Jiaqing Mo,Yajun Liu,Chunliang Liu,Zhenhong Jia

DOI: https://doi.org/10.1002/pssa.201431057

2014-01-01

Abstract:This paper reports on the use of a novel all‐porous‐silicon configuration consisting of a surface grating and a high‐reflectivity quarter‐wave stack, arranged as both an all‐porous‐silicon grating diffractive device, and a highly sensitive and inexpensive biosensor. The diffraction efficiency of the top surface grating in this structure can be considerably improved for biosensing. Moreover, a porous‐silicon high‐reflectivity multilayer can not only prevent the signal energy from radiating to the substrate, but also increase the internal surface area of the sensing platform for detecting more probing molecules. When 3‐aminopropyltriethoxysilane (APTES) was employed as a probing molecule, the sensitivity of the proposed structure increased up to 1 order higher than the porous‐silicon diffraction‐grating biosensors without a high‐reflectivity quarter‐wave stack. It has been shown by experimentation that before and after the APTES, −3‐order diffraction efficiency changes from 1.30 × 10−3 to 1.25 × 10−4. Excellent agreement is achieved between the experimental results and simulations based on the rigorous coupled‐wave analysis.
Study of Humidity Properties of Zinc Oxide Modified Porous Silicon

Tao Jiang,Xiaofeng Zhou,Jian Zhang,Jianzhong Zhu,Xinxin Li,Tie Li

DOI: https://doi.org/10.1109/icsens.2007.355845

2006-01-01

Abstract:In this paper, we discussed the humidity sensing behavior of Zinc Oxide modified porous silicon (ZnO/PS) composite structure. The porous silicon substrates were prepared by the electrochemical etching process first. Then, by sol-gel technique, it is possible to obtain a uniform Zinc Oxide films on the porous silicon substrates. The electrical conductivities of the porous silicon and Zinc Oxide modified porous silicon structures under different humidity levels were measured. Our study indicate that the modification of porous silicon by sol-gel Zinc Oxide increase the sensitivity and shorten the response time to the relative humidity, probably due to the increment of the specific surface area of the porous silicon. The other parameters, such as the concentration of zinc oxide precursors, which can affect the sensing performance, were also discussed. Therefore, the Zinc Oxide modified porous silicon composite structure studied is potential to develop the humidity sensor with high performance.
Recent Progroess of Research on Porous Silicon

Peng Diao,Shengmin Cai,Jingjian Li,Yong Chen,Shulin Zhang

DOI: https://doi.org/10.3724/j.issn.1000-0518.1994.4.17

1994-01-01

Abstract:Porous silicon (PS) is a kind of new material which has great potential applications in developing super large scale integrated circuits and all silicon optointergrated circuits, In this paper, different formation conditions of PS are reviewed,and the latest developments of the research on its physical and chemical properties and formation mechanism are presented.Applications in manufacturing PS Iight emitting devices and other fields are discussed.
Humidity Sensors: Porous Ionic Membrane Based Flexible Humidity Sensor and Its Multifunctional Applications (adv. Sci. 5/2017)

Tie Li,Lianhui Li,Hongwei Sun,Yan Xu,Xuewen Wang,Hui Luo,Zheng Liu,Ting Zhang

DOI: https://doi.org/10.1002/advs.201770026

IF: 15.1

2017-01-01

Advanced Science

Abstract:Ting Zhang and co‐workers fabricate a novel wearable flexible humidity sensor from a thin ionic membrane with well‐defined three‐dimensional porous structure, showing highly sensitive, selective and fast response to relative humidity in article number 1600404. The wearable smart label is explored to measure the water contents of human skin, which shows great potential in application for flexible and wearable electronic devices.
Fabrication of porous silicon insulation layer with infrared focal plane and its application

范茂彦,姜胜林,张丽芳

DOI: https://doi.org/10.13245/j.hust.2011.11.011

2011-01-01

Abstract:Porous silicon samples were prepared by electrochemical method and primary batteries method,and the porous silicon（PS） pore size,porosity and film thickness were controlled by different HF concentrations,current densities and reaction times in the anodic oxidation reaction.It was found that the porosity values of PS samples prepared by different current density had the same trend that the porosity increased at the beginning and then decreased with etching time.The growth rate of PS is increased with current density.BST pyroelectric sensor was encapsulated on the surface of the porous silicon sample.The sample test results show that the thermal insulation properties of porous silicon is close to micro-bridge.
Progresses of the Thin Film Gas Sensors Based on Semiconducting Ceramics

杨志华,余萍,肖定全

DOI: https://doi.org/10.3321/j.issn:1001-9731.2004.01.002

2004-01-01

Journal of Functional Biomaterials

Abstract:Thin film gas sensors based on semiconducting ceramics have various advantages over the traditional bulk gas sensors, such as higher sensitivity, faster responsibility, and lower cost. Recent years the researches on this kind of sensors have got much attention in the research and development fields for gas sensors. It was believed that the film gas sensors based on semiconducting ceramics will be one of the development trends in gas sensors research in the near future. In this paper a review on the thin film gas sensors based on semiconducting ceramics in recent years was presented, the structures of the thin film gas sensor were outlined, the gas sensor materials and the manufacturing methods for the thin films were summed up, and some development features in the coming years were briefly analyzed.
Porous silicon as a carrier of sensing materials in sensors

Ziqiang Zhu,Li Shao,Jian Zhang,Jianzhong Zhu

2006-01-01

Rare Metal Materials and Engineering

Abstract:Novel potassium ion selective electrodes (K+ISEs) and cDNA array sensors based on porous silicon (PS) have been developed. The calibration curve for the K+ISEs is linear within a wide range of pK=2.0 similar to 6.0 with the slope of 56 mV per decade, which is near Nernst response. The response time and detection limit are within 31 s and 0.5 mu mol/L, respectively. The selective coefficient for Na+ is -3.8, satisfies the requirement for the assay of blood potassium. The response variation is within 2 mV during 2 months. The binding capacity, the dynamic range and the detection limit of the DNA sensors were improved by replacing glass slide with PS substrates. The cDNA array sensors can bear 80 degrees C of high temperature, 75% of humidity, 3.6 kLx of irradiation and keep stable within 10 days when they are exposed in air. Good performances of the K+ISE and the cDNA array sensor are attributed to the large internal surface area and the easily modified microstructure of PS.
Progress in Gas Sensor Technology

LU Ge-yu,QUAN Bao-fu,ZHANG Tong

DOI: https://doi.org/10.3969/j.issn.1002-1841.2009.z1.042

2009-01-01

Abstract:The progress in gas sensor technology is overviewed briefly,by putting emphasis on advances of gas sensors utilizing semiconducting oxides,solid electrolytes and nanomaterials.R&D of some companies in Japan were also introduced.
Porous Silicon-Based Cdna Array Sensors

Ziqiang Zhu,Jian Zhang,Bin Zhu,Jianzhong Zhu,Rong Wang,Xiaqin Wu

DOI: https://doi.org/10.1109/ICMA.2006.257615

2006-01-01

Abstract:A novel cDNA array sensor with porous silicon / oxidized porous silicon (PS/OPS) as its substrate has been developed. The binding capacity, linear dynamic range, and detection limit of the sensor were improved due to enormous specific surface area of PS/OPS compared. to the existing conventional techniques. The cDNA array sensor shows good stability as the sensor can bear 80 centre degree of temperature, 75% of relative humidity and 3.6 kLx of irradiation (Signals changes are close to SD), respectively.
Recent Development and Future Perspective of Silicon Carbide High-Temperature Pressure Sensor

PANG Tian-zhao,YAN Zi-lin,TANG Fei,WANG Xiao-hao

DOI: https://doi.org/10.3969/j.issn.1006-1355-2011.01.037

2011-01-01

Abstract:Silicon carbide(SiC),owing to its excellent electrical,mechanical and chemical properties,is a promising material for the development of high-temperature pressure sensors.This paper is a review of high-temperature SiC pressure sensor.The SiC material property is introduced.The latest development of the high-temperature SiC pressure sensors is discussed. The structures and characteristics of capacitive,piezoresistive,and optical pressure sensors are presented and compared. Finally,the present problems and challenge for these sensors in China is analyzed.
High-Performance Porous PDMS-Based Piezoresistive Sensor Prepared by a Modified Microwave Irradiation Process

Yilin Zhao,Xiao Lei,Jiandong Xu,Yunfan Li,Weiguang Wu,Xuanqi Guo,Tianling Ren,Feng Liu

DOI: https://doi.org/10.1021/acsaelm.2c01123

IF: 4.494

2022-10-20

ACS Applied Electronic Materials

Abstract:The flexible pressure sensor based on a porous structure has excellent sensing performance. It is critical to develop a large-scale and low-cost manufacturing method for realizing high-performance flexible sensors with porous structures. Herein, a porous polydimethylsiloxane (PDMS) was prepared by a modified microwave irradiation process, and an ultrahigh sensitive flexible piezoresistive sensor with wide sensing range was obtained by coating carbon nanotubes (CNTs)/graphene on the porous PDMS surface. Due to the uniform macroporous structure in PDMS and the synergistic conductive effect of graphene and CNTs, the sensitivity of the flexible sensor is up to 300.31 kPa–1 in 0–50 kPa and 52.51 kPa–1 in 50–200 kPa. Moreover, the flexible device has good reversibility, rapid response speed, good stability, and a certain anti-electromagnetic interference ability. The application in the monitoring of physiological signals demonstrates that the porous PDMS-based sensor prepared by the convenient and environmental microwave irradiation process has remarkable ability in monitoring human health. In addition, the modified microwave irradiation method also provides a way for the preparation of porous materials for other applications such as electromagnetic shielding materials.

materials science, multidisciplinary,engineering, electrical & electronic
Study on Porous Silicon as a Sacrificial Layer in Microsensor

LOU Li-fei,LI Yue-jin,YANG Yin-tang,WANG Jia-you

DOI: https://doi.org/10.3969/j.issn.1004-2474.2008.02.020

2008-01-01

Abstract:The porous silicon was successfully prepared by double-cell electrochemical etching.The SEM photos of porous silicon shows that the porous silicon obtained by this method has the smallest hole diameter,good uniformity,large depth(exceeding 100 μm),and removal porous silicon using the mighty watery KOH solution.The above porous silicon much more accords with the appliance require of sacrificial layer in MEMS.Finally,the etching time and current of double-cell electrochemical etching which affect the etching speed of the porous silicon were studied.
Optical Characteristics and Environmental Pollutants Detection of Porous Silicon Microcavities

JianFeng Huang,Sha Li,QingWei Chen,LinTao Cai

DOI: https://doi.org/10.1007/s11426-011-4346-3

2011-01-01

Science China Chemistry

Abstract:Porous silicon microcavities (PSM) optical crystals consisting of a Fabry-Perot microcavity embedded between two distributed Bragg reflectors have been fabricated by electrochemical etching. Scanning electron microscopy (SEM) clearly depicted their physical sandwich construction. The optical feature of the PSM structure was tuned by varying the anodization parameters. Through proper thermal oxidation and surface chemical modifications, the resulting structures were employed as optical sensors for the detection of environmental pollutants including volatile organic vapors (i.e. acetonitrile, toluene, cyclohexane, chloroform, acetone and ethanol) and interior decoration gases (i.e. toluene, ammonia and formaldehyde). Fourier transform infrared spectroscopy (FTIR) spectra confirmed the effective thermal annealing and surface modification chemistry, and the sensing process was accompanied by recording the modified structures' optical responses when exposed to target analytes. The PSM optical sensors showed good stability, sensitivity and selectivity, implying promising applications in gas sensing and environmental monitoring.

Progress in Porous Silicon Sensors

The Research on the Gas Sensor Based on LAPS and Nanometer Porous Silicon

Study on Fabrication of Porous Silicon Gas Sensor and Gas Sensing-characteristics

A Zinc Oxide modified Porous Silicon humidity sensor

A New Method for Improving Sensing Characteristics of Porous Silicon

Physical analysis of the response properties of porous silicon microcavity biosensor

A breathable, sensitive and wearable piezoresistive sensor based on hierarchical micro-porous PU@CNT films for long-term health monitoring

Nanoscale morphology, optical dynamics and gas sensor of porous silicon

Porous Silicon Based on Multilayer Dielectric‐grating Optical Sensors with Enhanced Biosensing

Study of Humidity Properties of Zinc Oxide Modified Porous Silicon

Recent Progroess of Research on Porous Silicon

Humidity Sensors: Porous Ionic Membrane Based Flexible Humidity Sensor and Its Multifunctional Applications (adv. Sci. 5/2017)

Fabrication of porous silicon insulation layer with infrared focal plane and its application

Progresses of the Thin Film Gas Sensors Based on Semiconducting Ceramics

Porous silicon as a carrier of sensing materials in sensors

Progress in Gas Sensor Technology

Porous Silicon-Based Cdna Array Sensors

Recent Development and Future Perspective of Silicon Carbide High-Temperature Pressure Sensor

High-Performance Porous PDMS-Based Piezoresistive Sensor Prepared by a Modified Microwave Irradiation Process

Study on Porous Silicon as a Sacrificial Layer in Microsensor

Optical Characteristics and Environmental Pollutants Detection of Porous Silicon Microcavities