Recent Development and Future Perspective of Silicon Carbide High-Temperature Pressure Sensor

PANG Tian-zhao,YAN Zi-lin,TANG Fei,WANG Xiao-hao
DOI: https://doi.org/10.3969/j.issn.1006-1355-2011.01.037
2011-01-01
Abstract:Silicon carbide(SiC),owing to its excellent electrical,mechanical and chemical properties,is a promising material for the development of high-temperature pressure sensors.This paper is a review of high-temperature SiC pressure sensor.The SiC material property is introduced.The latest development of the high-temperature SiC pressure sensors is discussed. The structures and characteristics of capacitive,piezoresistive,and optical pressure sensors are presented and compared. Finally,the present problems and challenge for these sensors in China is analyzed.
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