Research on Poly-Silicon Integrated Pressure Sensor for High Temperature

张威,王阳元
DOI: https://doi.org/10.3321/j.issn:0372-2112.2003.11.033
2003-01-01
Abstract:Pressure sensor for high temperature is very useful for various area applications.Some special materials such as SIC,SOI can be used to manufacture high temperature pressure sensor,but due to the difficult process or/and cost,they are not used widely.In this paper,a novel poly-silicon pressure sensor is designed,further more a CMOS fully depleted integrated circuit is used to change output signal into 0~+5V industrial signal.After simulation and process experiments,the optimized condition of poly-silicon diffusion concentration was found,and the temperature coefficient is reduced to nearly zero between -40℃~180℃.
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