Abstract:Porous silicon (PSi) has developed for many applications such as gas and humidity sensors. Various methods are available to fabricate PSi, and electrochemical anodization is common due to low cost and easy use. Current density, etching/anodization time, type of etching solution, and electrode distance are the parameters determining resulting pores. The substrate used n-type silicon wafer with (111)-orientation and resistivity of 1.5-4.5 Ω.cm with a size of 1.5×1 cm 2 . The cleaning process of the samples employed the RCA cleaning procedure. Conductive contacts required for the electrochemical anodization were aluminum on the samples. The electrodes were the Si sample acting as anode and platinum (Pt) electrode as a cathode. The etching solution using a mixture of HF (40%) and ethanol (99%) with a 1:1 ratio. The electrode distance was 1.5, 2.0, and 2.5 cm. The current density for each electrode distance was 10, 30, and 50 mA/cm 2 with an anodization time of 30 min. SEM and UV-Vis characterizations were applied to obtain surface morphology and reflectance, respectively. For all samples, the reflectance of PSi was lower than the reflectance of the original silicon surface (no pores). This condition indicates that the PSi is suitable as an anti-reflective layer in a solar cell. However, the PSi of reflectance curves has irregular shapes as a function of wavelength for different electrode distance and the current density. The SEM images confirmed that the pores formed on the silicon surface were inhomogeneous. The pore size decreased with the increase of the electrode distance while it increased as the increase of the current density. There was a correlation between pores size and reflectance at specific wavelength numbers.

Study on Fabrication of Porous Silicon Gas Sensor and Gas Sensing-characteristics

The Research on the Gas Sensor Based on LAPS and Nanometer Porous Silicon

The Optical Properties of Porous Silicon Produced by Metal-Assisted Anodic Etching

Al-assisted Anodic Etched Porous Silicon

Study the Characteristic of Planer and Sandwich PSi Gas Sensor (Comparative Study)

Study of Optical Properties of Porous Silicon Produced by Metal-Aid

Role of microstructure in porous silicon gas sensors for NO$_2$

Porous Si (111) Fabrication Using Electrochemical Anodization: Effects of Electrode Distance and Current Density

Photoluminescence quenching effect on porous silicon films for gas sensors application

Nanoscale morphology, optical dynamics and gas sensor of porous silicon

Ultrasensitive flexible NO2 gas sensors via multilayer porous polymer film

ZnO Nanorod/porous Silicon Nanowire Hybrid Structures As Highly-Sensitive NO2 Gas Sensors at Room Temperature

Preparation and Characterization of Freestanding Porous Silicon Films with High Porosities

Fabrication and design of a toxic gas sensor based on polyaniline/titanium dioxide nanocomposite film by layer-by-layer self-assembly

Potential of Porous Silicon Machined by Laser Photoetching to be used as Sensor

Enhanced sensing performance of zinc oxide porous silicon heterojunction-based gas sensors

response of MoS 2 / porous silicon nanowire heterojunctions to NO 2 at room temperature †

Highly enhanced response of MoS2/porous silicon nanowire heterojunctions to NO2 at room temperature

Fabrication and Characterization of Polyaniline-Based Gas Sensor by Ultra-Thin Film Technology

Silicon nanowire sensor for gas detection fabricated by nanoimprint on SU8/SiO2/PMMA trilayer

Optical Absorption and Photoluminescence Studies of Free-Standing Porous Silicon Films with High Porosities