Silicon nanowire sensor for gas detection fabricated by nanoimprint on SU8/SiO2/PMMA trilayer

Jing Wan,Shao-Ren Deng,Rong Yang,Zhen Shu,Bing-Rui Lu,Shen-Qi Xie,Yifang Chen,Ejaz Huq,Ran Liu,Xin-Ping Qu
DOI: https://doi.org/10.1016/j.mee.2008.12.022
IF: 2.3
2009-01-01
Microelectronic Engineering
Abstract:The aim of our work is to fabricate the silicon nanowire (SiNW) sensor used for gas detection by a novel SU8/SiO"2/PMMA trilayer nanoimprint technique instead of electron beam lithography (EBL).The SiNW sensor fabricated in our experiment is based on the silicon on insulator (SOI) substrate which is doped by boron with a dopant concentration of 8x10^1^7cm^-^3. Two nanowire sensors with different linewidths as well as a thin-film device were fabricated for comparison. The fabricated devices were then used for detecting 250ppm NO"2 and 250ppm NH"3. The results show a promising enhanced sensitivity especially for the narrower device.
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