Trilayer nanoimprint fabrication and simulation of the silicon nanowire sensor for gas detection

Jing Wan, Shao-Ren Deng,Yifang Chen,Ejaz Huq, Ran Liu, Xin-Ping Qu
DOI: https://doi.org/10.1109/NEMS.2009.5068745
2009-01-01
Abstract:In this work, we demonstrate a novel SU8/SiO2 /PMMA trilayer nanoimprint technique to fabricate the silicon nanowire (SiNW) sensor used for gas detection. The SiNW sensor fabricated in our experiment is based on the silicon on insulator (SOI) substrate which is doped by boron with a dopant concentration of 8 times 1017 cm-3. Two nanowire sensors with different linewidths as well as a thin-film plane device were fabricated for comparison. The fabricated devices were then used for detecting 250 ppm NO2 and 250 ppm NH3. The results show a large enhanced sensitivity especially for the narrower device. Finally, a computer simulation work was done to qualitatively explain our experimental results.
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