Abstract:In this review article, we give a new insight into the luminescence mechanism of porous silicon. First, we observed a “pinning” characteristic of photoluminescent peaks for as-etched porous silicon samples. It was explained as resulting from the discontinuous variation of the size of Si nanostructures, i.e. the size quantization. A tight-binding calculation of the energy band gap widening versus the dimension of nanoscale Si based on the closed-shell Si cluster model agrees well with the experimental observations. Second, the blue-light emission from porous silicon was achieved by using boiling water treatment. By investigating the luminescence micrographic images and the decaying behaviors of PL spectra, it has been shown that the blue-light emission is believed to be originated from the porous silicon skeleton rather than the surface contaminations. The conditions for achieving blue light need proper size of Si nanostructures, low-surface recombination velocity, and mechanically strong skeleton. The fulfillment of these conditions simultaneously is possible but rather critical. Third, the exciton dynamics in light-emitting porous silicon is studied by using the temperature-dependent and picosecond time-resolved luminescence spectroscopy. A direct evidence of the existence of confined excitons induced by the quantum size effect has been revealed. Two excitation states are found to be responsible for the visible light emission, i.e. a higher lying energy state corresponding to the confined excitons in Si nanostructures and a lower lying state related with surfaces of Si wires or dots. A picture of the carrier transfer between the quantum confined state and the surface localized state has been proposed. Finally, we investigated the transient electroluminescence behaviors of Au/porous silicon/Si/Al structure and found it is very similar to that of an ordinary p-n junction light-emitting diode. The mechanism of electroluminescence is explained as the carrier injection through the Au/porous silicon Schotky barrier and the porous silicon/p-Si heterojunction into the corrugated Si wires, where the radiative recombination of carriers occurs.

A New Method for Improving Sensing Characteristics of Porous Silicon

Study of Optical Properties of Porous Silicon Produced by Metal-Aid

Photoluminescence, Composition and Microstructure of Porous Silicon Prepared by Different Substrates

Luminescence and photoconductivity properties of porous polycrystalline silicon

Research on Luminescence Properties of Porous Silicon Using a Organic Semiconductor Contact

A Comparison of Cathodoluminescence and Photoluminescence of Porous Silicon and the Influence of Aging and Electron Irradiation of These Properties

LUMINESCENCE BEHAVIOR AND MECHANISM OF LIGHT-EMITTING POROUS SILICON

A New Method to Achieve the Blue/Green Light-Emitting from Porous Silicon

Effect of annealing on photoluminescence of passivated porous silicon

Annealing and amorphous silicon passivation of porous silicon with blue light emission

Effect of rapid thermal treatment on photoluminescence of surface passivated porous silicon

Pulsed Anodic Etching: an Effective Method of Preparing Light-Emitting Porous Silicon

IMPROVING THE STABILITY OF POROUS SILICON PHOTOLUMlNESCENCE BY DAMP OXIDATION

Effect of post-treatment processes on the photoluminescence of porous silicon

Research of Electroluminescence Based on Porous Silicon

The Effect of Selenization and Post-Annealing on the Photoluminescence Property of Porous Silicon

The Optical Properties of Porous Silicon Produced by Metal-Assisted Anodic Etching

Enhanced Near-Edge Transitions by Unsaturated Si Atoms in Porous Silicon

Stable and Intense Blue-Green Emission in Porous Silicon Achieved by Amine Immersion and Rapid Thermal Oxidation

Improving the stability of porous silicon photoluminescence by damp oxidation

Preparation Of Porous Silicon Using Anodizing And Suppercritical Drying