High Temperature Oxidation of Reaction-Bonded Silicon Carbide

吕振林,李世斌,高积强,金志浩,李贺军
DOI: https://doi.org/10.3321/j.issn:1004-0609.2002.z1.011
2002-01-01
The Chinese Journal of Nonferrous Metals
Abstract:The oxidation behavior of reaction bonded silicon carbide (RB SiC), and the effects of process parameters on the oxidation, were studied. The results show that the mass of RB SiC samples can be increased when they are oxidized at 900?℃, except that the mass of sample with large addition content of petrol coke can be decreased in initial stage of oxidation. The relationship between the mass gain of RB SiC and holding time follows the parabolic rule. The oxidation resistance of RB SiC at 900?℃ can be increased by the addition of Ni and Al elements. But the oxidation of RB SiC does't affect largely on its electric conduction. The oxidation mechanism of RB SiC and the affecting factor on it are analyzed and discussed.
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