Preparation and Characterization of Porous SiC Ceramics by Oxidation Bonding Method

Cheng-ying BAI,Kui-fan SU,Xiang-yun DENG,Jian-bao LI,Chun-peng WANG,Ya-ni JING
DOI: https://doi.org/10.16552/j.cnki.issn1001-1625.2013.09.021
2013-01-01
Abstract:Porous silicon carbide( SiC) ceramics were prepared by an oxidation bonding process from SiC,CMC in air at low temperature,The surface of SiC was oxidized to SiO2,SiC particles were bonded by oxidation-derived SiO2to prepare porous SiC ceramics. The effects of particle size and sintering temperature and molding pressure of oxidation bonding porous SiC ceramics were studied. The oxidation behavior,composition and microstructure of the samples were investigated by TG-DSC,XRD,SEM. The results show that,the finer the SiC particles,the higher their activity and their oxidizability,and The oxidation degree up to a maximum of 49. 58% with the particle size 1 μm,but the specimen's mass-gain in air at 1000 ℃ for 100 h was 7. 53%. The oxidation degree of SiC increases quickly under the high temperature. Accordingly,the porosity is decreasing; the molding pressure also play a role in porosity and the oxidation degree of SiC ceramics.
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