Microstructure, Porosity and Resistivity in Reaction-Bond ed Silicon Carbide

Zhenlin Lü,Liufeng Xiong,Jiqiang Gao,Zhihao Jin
DOI: https://doi.org/10.3321/j.issn:0253-987X.1999.04.012
1999-01-01
Abstract:The relation between microstructure and resistivity of reaction-bonded silicon carbide (RBSiC) is examined. Free silicon was removed by heat-treatment at 1650 °C and 1800 °C. Results show that there is a 15%-20% free silicon in the microstructure of RBSiC while the porosity and resistivity are lower. Removal of the free silicon at 1650 °C and 1800 °C leads to an increase in porosity, decrease in density and increase in resistivity. Meanwhile, transformation of β-SiC to α-SiC takes place in the RBSiC microstructure after the removal of free silicon at 1800 °C.
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