High Temperature Oxidation Kinetics of Reaction-Bonded Silicon Carbide

Qingwei Huang,Jiqiang Gao,Zhihao Jin
DOI: https://doi.org/10.3321/j.issn:1002-185X.2000.01.009
2000-01-01
Rare Metal Materials and Engineering
Abstract:The high temperature oxidation kinetics of a reaction-bonded silicon carbide oxided in air at 1 300 degrees C were investigated. It has been found that the oxidation kinetic curve is logarithmic in form indicating the crystallization of amorphous silica and the cracking of oxide scale.
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