High temperature oxidation behavior of binary Co-10Si alloys

Honghua Zhang,Junhuai Xiang,Yang Zhang,Wei Wang,Yi Li

2012-01-01

Abstract:The oxidation behavior in 0.1 MPa pure O 2 at 700 and 800°C of the binary Co-10Si (at.%) aloys prepared by vacuum arc melting was investigated. The experiment results indicated that both the oxidation dynamic curves approximate obeyed the parabolic law (n=2) and the parabolic rate constants were 1.54×10 -10, 6.49×10 -10 g 2·cm -4·s -1 in 700°C and 800°C respectively. After the oxidation for 24 h, the oxide film layers formed at 700°C and 800°C were relatively similar. The outer layer of the oxide film was the cobalt oxide and the inner layer was the mixture of cobalt and silicon oxide which means internal oxidation of silicon was appeared in the alloy matrix. Compared with Co-5Si alloys, no dense and continuous oxidation layers were formed on the surface of the alloys by adding 10 at.% silicon in the matrix of cobalt.