STUDY OF HTS STEP-EDGE JUNCTION

曹春海,杨名,杨森祖,徐筱乐,尤立星,吉争鸣,康琳,许伟伟,吴培亨
DOI: https://doi.org/10.3969/j.issn.1000-3258.2003.z1.064
2003-01-01
Abstract:We have investigated HTS step-edge junction on the LaAlO-3 substrate. The steep step with the gradient angle more than 70° has been fabricated by means of metal transfer lift-off and ion-etching techniques. The characteristic of the junction is similar to that of SNS junction. Under the microwave radiation at 9.5GHz, the Shapiro step has appeared and temperature window of the junction has been observed.
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