Fabrication and design of Si-integrated switch chip based on AMR effect

Shi-xiang WU,Tao YU,Peng WANG,Hui-zhong XU,Wan-li ZHANG
DOI: https://doi.org/10.3969/j.issn.1001-3830.2014.04.009
2014-01-01
Abstract:NiFe thin film is deposited on the 200nm-thick Si substrates covered with Si3N4 by RF and DC magnetron sputtering. Using Wheatstone bridge for sensing magnetic field, the size of Wheatstone bridge was designed and the bridge was prepared by photolithography and lift-off techniques. Influence of thickness of NiFe film on the performance of the bridge was investigated, and the result indicates that NiFe film thickness of about 50nm leads to higher sensitivity. By integrating the magnetoresistance element with the signal amplification circuit, magnetic switch chip was successfully prepared with magnetic field threshold value of about 2Oe.
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