Abstract:Nanoporosity in silicon results in an interface-dominated mechanics, fluidics and photonics that are often superior to the ones of the bulk material. However, their active control, e.g. as a response to electronic stimuli, is challenging due to the absence of intrinsic piezoelectricity in the base material. Here, for large-scale nanoporous silicon cantilevers wetted by aqueous electrolytes, we show electrosorption-induced mechanical stress generation of up to 600 kPa that is reversible and adjustable at will by electrical potential variations of approximately 1 V. Laser cantilever bending experiments in combination with in-operando cyclic voltammetry and step-coulombmetry allow us to quantitatively trace this large electro-actuation to the concerted action of 100 billions of parallel nanopores per square centimeter cross section and to determine the capacitive charge-stress coupling parameter upon ion ad- and desorption as well as the intimately related stress actuation dynamics for perchloric and isotonic saline solutions. A comparison with planar silicon surfaces reveals mechanistic insights on the observed electrocapillarity (electrostatic Hellmann-Feynman interactions) with respect to the importance of oxide formation and pore-wall roughness on the single-nanopore scale. The observation of robust electrochemo-mechanical actuation in a mainstream semiconductor with wafer-scale, self-organized nanoporosity opens up entirely novel opportunities for on-chip integrated stress generation and actuorics at exceptionally low operation voltages.

Silicon nanowire and cantilever electromechanical switches with integrated piezoresistive transducers

Probing Contact-Mode Characteristics of Silicon Nanowire Electromechanical Systems with Embedded Piezoresistive Transducers

General Existence of Flexural Mode Doublets in Nanowires Targeting Vectorial Sensing Applications

Plasmon-driven Nanowire Actuators for On-Chip Manipulation

Interrogating contact-mode silicon carbide (SiC) nanoelectromechanical switching dynamics by ultrasensitive laser interferometry

Fabrication of A Nanoelectromechanical Switch Using A Suspended Carbon Nanotube

Dual-gate Silicon Carbide (sic) Lateral Nanoelectromechanical Switches

Nanoelectromechanical Switches with Vertically Aligned Carbon Nanotubes

Electrical Actuation and Readout in a Nanoelectromechanical Resonator Based on a Laterally Suspended Zinc Oxide Nanowire

Piezotronic effect in AlGaN/AlN/GaN heterojunction nanowires used as a flexible strain sensor

Atomic Switches of Metallic Point Contacts by Plasmonic Heating.

Strain-Engineering-Driven Photomechanical–Photoelectric Coupled Flexible Photodetector Based on Hexagonal Silicon Nanowire Films

Tunable Electromechanical Coupling of a Carbon Nanotube-Reinforced Variable Cross-Section Nanoswitch with a Piezoelectric Effect

Electrostatically actuated silicon-based nanomechanical switch at room temperature

Nano strain-amplifier: making ultra-sensitive piezoresistance in nanowires possible without the need of quantum and surface charge effects

Wafer-Scale Electroactive Nanoporous Silicon: Large and Fully Reversible Electrochemo-Mechanical Actuation in Aqueous Electrolytes

Piezopotential gated nanowire--nanotube hybrid field-effect transistor.

Nonlinear dynamics of nanoelectromechanical cantilevers based on nanowire piezoresistive detection

Silicon nanowire piezoresistor and its applications: A Review

Robust Silicon Carbide (sic) Nanoelectromechanical Switches with Long Cycles in Ambient and High Temperature Conditions

Ultrahigh sensitive piezotronic strain sensors based on a ZnSnO 3 nanowire/microwire