Abstract:Ge and Ga-doped Ge thin films have been epitaxially grown on GaAs (001) substrates by metalorganic chemical vapor deposition (MOCVD). Structural studies revealed that the temperature of the substrate played an important role in controlling the Ga-incorporations as well as affecting the surface morphologies. Dot, dot-in-hole, and hole structures have been observed by changing the growth temperatures under, otherwise, the same MOCVD conditions for p-type Ge. These surface features are associated with segregation, migration, and coalescence of Ga-rich droplets on the growing surface, especially when Ga-doping is introduced. Mode softening of the longitudinal optical (LO) phonon of Ge has also been observed. This mode softening is dominated by the effect of free-carrier concentrations more than the effect of doping-induced crystal disordering and lattice strain. We have also observed atomic interdiffusions across the Ge/GaAs interface by employing spatially resolved Raman scattering and high-resolution X-ray diffraction (HRXRD), measuring from the cross-section of the Ge/GaAs heterostructure. Such atoms intermixing cause great challenges in controlling the doping concentrations in the Ge epilayer, they could also give rise to an intermediate layer in between the Ge epilayer and the GaAs substrate. Detailed morphological and structural properties of these Ge-on-GaAs heterostructures have been discussed in this paper, which could have important consequence when optimizing the Ge-on-GaAs growth by MOCVD.

Droplet-Induced Dot, Dot-In-Hole, and Hole Structures in Gage Thin Films Grown by Mocvd on Gaas Substrates

Growth and Microstructures of High Density Ge Quantum Dots on SiO_2 Layers

Investigation of Ge Quantum Dots Formation on Sio2 Substrate Through Annealing Process

Ge-Dot/Si Multilayered Structures Through Ni-Induced Lateral Crystallization

MOCVD Ge-on-GaAs and Its P-Type Doping Via Incorporating Ga Atoms

High-density Ge Dots Grown on Si Substrate by Modified S-K Method

Microstructures of Ge-dots/Si Multilayered Structures Fabricated by Ni-induced Lateral Crystallization

Observation of Ga Metal Droplet Formation on Photolithographically Patterned GaAs (100) Surface by Droplet Epitaxy

Ni induced lateral crystallization of high density Ge-dots/Si heterostructures

Etch Pits and Threading Dislocations in GaN Films Grown by Metal-Organic Chemical Vapour Deposition

Optimal Growth of Ge-rich Dots on Si(001) Substrates with Hexagonal Packed Pit Patterns.

Chemical Vapor Deposition of Ge on GaN/Al2O3(0001) Substrates

Holed Nanostructures Formed by Aluminum Droplets on a GaAs Substrate

Etch-Pits, of Gan Films with Different Etching Methods

P-type Ge Epitaxy on GaAs (100) Substrate Grown by MOCVD

3D Nanostructures on Ge/Si(100) Wetting Layers: Hillocks and Pre-Quantum Dots

Evolution of Nanomicro Structures on GaAs (001) Surface under High Temperature Evaporation

Effect of gallium termination on InGaAs wetting layer properties in droplet epitaxy InGaAs quantum dots

Formation of Self-Assembled Ga-Rich Droplet Chains on Gaas (100) Patterned by Focused Ion Beam

Germanium Dots with Highly Uniform Size Distribution Grown on Si(100) Substrate by Molecular Beam Epitaxy

Microstructure and Origin of Dislocation Etch Pits in Gan Epilayers Grown by Metal Organic Chemical Vapor Deposition