Abstract:The growing importance of applications based on machine learning is driving the need to develop dedicated, energy-efficient electronic hardware. Compared with von Neumann architectures, which have separate processing and storage units, brain-inspired in-memory computing uses the same basic device structure for logic operations and data storage<a href="#ref-CR1">1</a>,<a href="#ref-CR2">2</a>,<a href="/articles/s41586-020-2861-0#ref-CR3">3</a>, thus promising to reduce the energy cost of data-centred computing substantially<a href="/articles/s41586-020-2861-0#ref-CR4">4</a>. Although there is ample research focused on exploring new device architectures, the engineering of material platforms suitable for such device designs remains a challenge. Two-dimensional materials<a href="/articles/s41586-020-2861-0#ref-CR5">5</a>,<a href="/articles/s41586-020-2861-0#ref-CR6">6</a> such as semiconducting molybdenum disulphide, MoS2, could be promising candidates for such platforms thanks to their exceptional electrical and mechanical properties<a href="#ref-CR7">7</a>,<a href="#ref-CR8">8</a>,<a href="/articles/s41586-020-2861-0#ref-CR9">9</a>. Here we report our exploration of large-area MoS2 as an active channel material for developing logic-in-memory devices and circuits based on floating-gate field-effect transistors (FGFETs). The conductance of our FGFETs can be precisely and continuously tuned, allowing us to use them as building blocks for reconfigurable logic circuits in which logic operations can be directly performed using the memory elements. After demonstrating a programmable NOR gate, we show that this design can be simply extended to implement more complex programmable logic and a functionally complete set of operations. Our findings highlight the potential of atomically thin semiconductors for the development of next-generation low-power electronics.

Programmable Logic Based on Large Magnetoresistance of Germanium

Magnetic Logic Based on Diode-Assisted Magnetoresistance

Silicon-Based Current-Controlled Reconfigurable Magnetoresistance Logic Combined with Non-Volatile Memory

Enhanced Low Field Magnetoresistance in Germanium and Silicon-Diode Combined Device at Room Temperature

Large Positive Magnetoresistance In Germanium

Extremely Large Magnetoresistance at Low Magnetic Field by Coupling the Nonlinear Transport Effect and the Anomalous Hall Effect

Enhanced Linear Magnetoresistance of Germanium at Room Temperature Due to Surface Imperfection

A Magnetoelectric Logic Gate

Giant Magnetoelectric Effect at the Graphone/ferroelectric Interface

Realization of Nonvolatile Multistate Memory and All 16 Boolean Logic Functions in a Single Self-Biased Magnetoimpedance Device

Voltage-Controlled Magnetoresistance in Silicon Nanowire Transistors.

Speed Enhancement of Magnetic Logic-Memory Device by Insulator-to-metal Transition

Resistance Transition Assisted Geometry Enhanced Magnetoresistance in Semiconductors

Reconfigurable Magnetic Logic Combined with Nonvolatile Memory Writing

Current-driven Magnetic Domain-Wall Logic

Logic and in-memory computing achieved in a single ferroelectric semiconductor transistor

Nonvolatile Multilevel Memory and Boolean Logic Gates Based on a Single Ni/[Pb(Mg1/3Nb2<…

Ultrafast and Ultralow‐Power Voltage‐Dominated Magnetic Logic

Reconfigurable aJ-Level Ferroelectric Transistor-Based Boolean Logic for Logic-in-Memory

Scalable energy-efficient magnetoelectric spin–orbit logic

Logic-in-memory based on an atomically thin semiconductor