Large Positive Magnetoresistance In Germanium

jiaojiao chen,xiaozhong zhang,zhaochu luo,jimin wang,hongguang piao
DOI: https://doi.org/10.1063/1.4896173
IF: 2.877
2014-01-01
Journal of Applied Physics
Abstract:A large positive magnetoresistance (MR) effect is observed in In/Ge/In structures. The current-voltage characteristics of the structure show a nonlinear behavior (even breakdown at higher voltages), caused by the space-charge effect. It is found that large magnetic field and low temperature can suppress the breakdown, resulting in a large value of MR. The MR is measured to be 1300% with the external magnetic field of 2 T and applied voltage of only 8.5V at room temperature. This work may be beneficial to the germanium based magnetic sensing industry. (C) 2014 AIP Publishing LLC.
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