Abstract:Linear magnetoresistance (LMR) is usually observed in topological quantum materials and plausibly connected with the topologically nontrivial surface state with Dirac-cone-like linear dispersion because the frequently encountered large Hall resistivity can be trivially mixed into the LMR via charge inhomogeneity. Herein, by applying an optimal gate voltage to nodal-line semimetal ZrGeSe two-dimensional (2D) layers with specific thicknesses, we observe a giant nonsaturated LMR of 8 × 104% at 2 K and a magnetic field of 9 T. This giant LMR is accompanied by a very small Hall resistivity, which is inconsistent with the charge inhomogeneity mechanism. Our systematic results confirm that the giant LMR is maximized when the topological semimetal is in the "even-metal" regime and suppressed upon evolution to the normal "odd-metal" regime. The "even-to-odd" transition is universal regardless of the thicknesses of the crystals. A comparison with Abrikosov's quantum LMR theory indicates that the observed LMR cannot be trivial.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acs.nanolett.1c01647.Full description of the material and other characterizations, experimental details, the first Brillouin zone in momentum space for the primitive unit cell of ZrGeSe, digital photograph, XRD pattern, Raman spectrum, and XPS spectra of ZrGeSe, longitudinal magnetoresistance (MR) at various temperatures, Hall resistance (Rxy) and longitudinal resistance (Rxx) from ZrGeSe nanoflakes with different thicknesses, charge density and mobility of the various samples at different gate voltages (PDF)This article has not yet been cited by other publications.

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