Abstract:Nominally undoped ZnO films were deposited by reactive sputtering on the lightly boron-doped (p−) and heavily boron-doped (p+) silicon substrates. The sputtered ZnO films were identified to be highly ⟨002⟩ oriented in crystallinity and n type in electrical conductivity. The current-voltage (I-V) characteristics revealed that the ZnO∕p−-Si heterojunction exhibited well-defined rectifying behavior while the ZnO∕p+-Si heterojunction did not possess rectifying function. As for the ZnO∕p+-Si heterojunction, it was electroluminescent to a certain extent in the visible region under sufficient forward bias with the positive voltage on the silicon substrate, while it emitted ultraviolet light characteristics of near-band-edge emission of ZnO under the reverse bias, which significantly dominated the visible emission. In contrast to the ZnO∕p+-Si heterojunction, the ZnO∕p−-Si heterojunction did not exhibit detectable electroluminescence (EL) under either forward or reverse bias. The I-V characteristics and EL mechanism of the above-mentioned heterojunctions have been tentatively explained in terms of the energy-band structures of the heterojunctions.

Improved Electrical Transport and Electroluminescence Properties of P-Zno/N-Si Heterojunction Via Introduction of Patterned Sio2 Intermediate Layer

Electroluminescence from ZnO/n<sup>+</sup>-Si Heterojunction

Ultraviolet Electroluminescence from Zno/P-Si Heterojunctions

Electroluminescent And Transport Mechanisms Of N-Zno/P-Si Heterojunctions

Dominant Ultraviolet Electroluminescence from P-Zno:As/N-Sic(6h) Heterojunction Light-Emitting Diodes

Fabrication and Transport Properties of ZnO∕Nb-1wt%-doped SrTiO3 Epitaxial Heterojunctions

Study on the luminescence properties of n-ZnO/p-Si hetero-junction diode grown by MOCVD

Improved Photoelectrical Properties of N-Zno/P-Si Heterojunction by Inserting an Optimized Thin Al2o3 Buffer Layer

Study on the Electroluminescence Properties of Diodes Based on N-Zno/p-nio/p-si Heterojunction

Improvement of UV electroluminescence of n-ZnO/p-GaN heterojunction LED by ZnS interlayer

Electroluminescence of the P-Zno:As/n-zno LEDs Grown on ITO Glass Coated with GaAs Interlayer

Room Temperature Electroluminescence from ZnO/Si Heterojunction Devices Grown by Metal–organic Chemical Vapor Deposition

Improved and Orange Emission from an N-Zno/P-Si Heterojunction Light Emitting Device with Nio As the Intermediate Layer

Vertical Conducting Ultraviolet Light-Emitting Diodes Based on P-Zno:As/N-Gan/N-Sic Heterostructure

Fabrication and Emission Properties of a N-Zno/p-gan Heterojunction Light-Emitting Diode

Fabrication and Characterization of P-Zno/n-zn0.8cd0.2o/n-zno Heterojunction

Fabrication of n-ZnO/p-Si heterojunctions by LP-MOCVD and their electroluminescence properties

Study on I-V and C-V Characteristic of ZnO/p-Si Heterojunction

Current Transport Mechanisms in Zinc Oxide/Silicon Carbide Heterojunction Light‐Emitting Diodes

N-ZnO Nanowires/p-Si Heterojunction with Amorphous Seed Layer Prepared by Atomic Layer Deposition