Abstract:Currently, crystalline and polycrystalline silicon wafer based solar cells dominate the photovoltaic market, which employs expensive manufacturing processes. Zinc oxide is one among the inexpensive alternatives for acting as emitter/anti-reflection coating layer which can be used in combination with widely available p-type silicon. Hence it becomes essential to gain in-depth knowledge about the charge transport mechanisms involved in the n-type ZnO/p-type silicon (Si) heterojunction devices. Therefore, Si/ZnO solar cell is modeled and the carrier transport mechanisms are carefully examined by analyzing the band edge discontinuities, electric field distributions at the Si/ZnO interface, carrier generation-recombination profile for varying ZnO thickness, carrier density and affinity values. The photo- generation rate degrades with the increase in ZnO emitter thickness owing to increased absorption in the blue region and is independent of ZnO affinity and donor concentration. The cliff like configuration with high conduction band discontinuity at the Si/ZnO interface for higher values of ZnO affinity has resulted in the formation of poor electric field and the lattice mismatch resulting in high defects formation (recombination centers) at Si/ZnO interface are the predominant causes for deficit in open circuit voltage and fill factor. Hence the conduction band offset alignment is further engineered by designing Si/MgZnO solar cell model and Mg doped ZnO emitter has significantly improved the band offset alignment at the p-n heterojunction when compared to ZnO emitter. Moreover, the simulation results revealed that the stronger electric field strength developed at the heterojunction is suggested to favor the carrier separation process by drift motion thereby improving the open circuit voltage and fill factor of the device. As a next step, both the models are optimized for varying emitter parameters like thickness, carrier density etc using Silvaco ATLAS simulator. Based on this investigation, the optimized Si/ZnO and Si/MgZnO designs anticipate improved conversion efficiencies of 11.57% and 14.46% respectively.

Study on I-V and C-V Characteristic of ZnO/p-Si Heterojunction

Microstructure, Wettability and Electrical Properties of N-Zno/zno-sl/p-cu2o Heterojunction

Electroluminescence from ZnO/n<sup>+</sup>-Si Heterojunction

Ultraviolet Electroluminescence from Zno/P-Si Heterojunctions

Electroluminescent and Carrier Transport Mechanisms of MgxZn1−xO∕Si Heterojunctions

Photoelectric Characteristics of n-ZnO/p-Si Heterojunction Photodetector

Electrical Characterization of Zno-Based Homojunctions

On the Piezo‐Phototronic Effect in Si/ZnO Heterojunction Photodiode: The Effect of the Fermi‐Level Difference

Fabrication and Electrical Characterization of Nanocrystalline ZnO/Si Heterojunctions

The Carrier Transport Mechanism and Band Offset at the Interface of ZnO/n-Si(111) Heterojunction

Advance in Cu2O-ZnO Solar Cells and Investigation of Cu2O-ZnO Heterojunction Fabricated by Magnetron Sputtering

Optoelectrical Properties of a Heterojunction with Amorphous InGaZnO Film on N-Silicon Substrate

The study of optical-electrical properties of ZnO(AZO)/Si heterojunction

Synthesis and Electrical Properties of p + -Si/n-ZnO Nanowires Heterojunction

Modelling, simulation, optimization of Si/ZnO and Si/ZnMgO heterojunction solar cells

Improved Photoelectrical Properties of N-Zno/P-Si Heterojunction by Inserting an Optimized Thin Al2o3 Buffer Layer

Current Transport Mechanisms in Zinc Oxide/Silicon Carbide Heterojunction Light‐Emitting Diodes

P-Type Zno By Sb Doping For Pn-Junction Photodetectors

A boron and gallium co-doped ZnO intermediate layer for ZnO/Si heterojunction diodes

The effects of deposition temperature and ambient on the physical and electrical performance of DC-sputtered n -ZnO/ p -Si heterojunction

P-Type Behavior from Sb-Doped Zno Heterojunction Photodiodes