Abstract:Is extra sulfurization an indispensable process for synthesizing quaternary chalcogenide? The answer is probably affirmative for most synthesis methods to suppress excessive sulfur vacancies. Pulsed laser deposition (PLD), an acknowledged technique for fabricating films with complex stoichiometry, is a great alternative approach to prepare Cu2ZnSnS4 (CZTS) films. However, to prevent evaporative losses the deposition temperature (Tis) must be limited below 400 °C, which makes post-annealing process extremely requisite to improve metastable films. Herein we develop an in-situ thermal treatment technique in room-temperature (RT)-PLD-synthesis of CZTS films to evade extra sulfurization process. According to multi-peaks Gaussian fitting analysis, RT-PLD implementing optimized in-situ treatment can broaden solar absorption of CZTS films, potentially contributed by sub-bandgap absorption due to intrinsic natural-intermedium-band effects of I2-II-IV-VI4 chalcogenide compounds. Stabilized chronoamperometry characterization combined with quasi-stoichiometric ratio demonstrates that the RT-PLD technique can equivalently restrain sulfur vacancy generation even without sulfurization. Physical mechanisms associated to order–disorder transitions of polycrystal CZTS during in-situ treatment can interpret morphological "lumpy-smooth-vuggy" transformation along with Tis varied. Therefore, such proposed RT-PLD technique is applicable to prepare polynary compounds with volatile elements and complicated stoichiometry ratio.

Pulsed Laser Deposition of Cu 2 ZnSnS 4 Thin Films from Single Quaternary Sulfide Target Prepared by Combustion Method

Pulsed Laser Deposition of Cu2ZnSn(SxSe1−x)4 Thin Film Solar Cells Using Quaternary Oxide Target Prepared by Combustion Method

Fabrication of Cu2ZnSnS4 thin films using a ceramic quaternary target

Fabrication of Cu 2 ZnSnS 4 absorber layers with adjustable Zn/Sn and Cu/Zn+Sn ratios

Single-step Preparation and Characterization of Cu2ZnSn(SxSe1−x)4 Thin Films Deposited by Pulsed Laser Deposition Method

Fabrication of Cu2ZnSnS4 Thin Films Through Sulfurization of Co-Electrodeposited Cu-Zn-Sn Metallic Precursor

Investigation on in-situ thermal treatment of room-temperature pulsed laser deposition technique: How to improve Cu2ZnSnS4 films for photoelectric application without sulfurization

Growth of CuH 2SZnSnSH 4S thin films by sulfurization of co-sputtered metallic precursors

Growth Of Cu2znsns4 Thin Films By Sulfurization Of Co-Sputtered Metallic Precursors

Fabrication of Cu 2 SnS 3 thin-film solar cells with oxide precursor by pulsed laser deposition

Preparation of Cu2znsns4-Based Thin Film Solar Cells by A Combustion Method

Study on the Optimization of Cu-Zn-Sn-O to Prepare Cu2ZnSnS4 Thin Film via a Nano Ink Coating Method

[Study of the Physical Properties of SnS Thin Films Deposited by Ultrasonic Spray Pyrolysis Method].

Phases formation of Cu2ZnSnS4 thin films by sulfurizing stacked precursors by sputtering from CuZn and CuSn targets

CTZS Thin Films Grown by a Sequential Deposition of Precursors

Facile single-component precursor for Cu2ZnSnS4 with enhanced phase and composition controllability

Fabrication of Cu2ZnSnS4 (CZTS) Absorber Films Based on Different Compound Targets

Deposition of (Ag,Cu)2Zn(Sn,Ge)S4 thin films on Mo-coated glass substrate by vacuum magnetron sputtering and post-sulfurization techniques

Synthesis and Characterization of Cu 2 ZnSnS 4 from Cu 2 SnS 3 and ZnS Compounds

A Novel Strategy for Preparation of Cu2(MII)(MIV)S4 Thin Films for Solar Cell: Sulfurization of Mixed Metal Oxides Precursor Synthesized by Combustion Method

Preparation And Characterization Of Cu2znsns4 Thin Films And Solar Cells Fabricated From Quaternary Cu-Zn-Sn-S Target