Eco-friendly, Solution-Processed In-W-O Thin Films and Their Applications in Low-Voltage, High-Performance Transistors

Ao Liu,Guoxia Liu,Huihui Zhu,Byoungchul Shin,Elvira Fortunato,Rodrigo Martins,Fukai Shan

DOI: https://doi.org/10.1039/c6tc00474a

IF: 6.4

2016-01-01

Journal of Materials Chemistry C

Abstract:Eco-friendly IWO thin films are fabricated via a low-cost solution process and employed as channel layers in thin-film transistors.

What problem does this paper attempt to address?

Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters

Li Zhu,Gang He,Yuting Long,Bing Yang,Jianguo Lv

DOI: https://doi.org/10.1109/ted.2018.2824336

2018-01-01

Abstract:Solution-driven metal-oxide semiconductors have recently received much attention as a viable option for low-cost, flexible electronic devices. In this paper, a simple, environmentally friendly aqueous solution method has been adopted to deposit an ultrathin In2O3 semiconductor layer with a thickness of about 7 nm at low temperature. Then, in combination with the advantages of atomic layer deposition (ALD) technology, an ultrathin aluminum oxide dielectric layer of about 20 nm was prepared to fabricate high-performance In2O3/Al2O3 thin-film transistor (TFT) devices. The device with optimized annealing temperature of 280 degrees C has demonstrated an excellent electrical performance, including a high saturation mobility of 11.85 cm(2) .V-1 . s(-1), a large ON/OFF current ratio of 10(6), a low threshold voltage of 0.12 V, a small hysteresis voltage of 0.05 V, and a small density of interface state of 1.97 x 10(12) cm(-2), respectively. To demonstrate the potential of In2O3/AlOx TFT toward more complex logic applications, the unipolar inverter was further constructed and exhibited a high gain of 5. Importantly, all these device parameters were obtained at an ultralow operating voltage of 2.5 V. As a result, it can be inferred that the water-induced In2O3 TFTs based on ALD-derived Al2O3 dielectrics have a potential application as a promising alternative for lowcost, low-power consumption, and large-area environmentally friendly oxide flexible electronics.
Fully solution-induced high performance indium oxide thin film transistors with ZrOx high-k gate dielectrics

L. Zhu,Gang He,Jianguo Lv,Elvira Fortunato,Rodrigo Martins

DOI: https://doi.org/10.1039/c8ra02108b

IF: 4.036

2018-01-01

RSC Advances

Abstract:Solution based deposition has been recently considered as a viable option for low-cost flexible electronics. In this context, research efforts have been increasingly focused on the development of suitable solution-processed materials for oxide based transistors. In this work, we report a fully solution synthesis route, using 2-methoxyethanol as solvent, for the preparation of In2O3 thin films and ZrOx gate dielectrics, as well as the fabrication of In2O3-based TFTs. To verify the possible applications of ZrOx thin films as the gate dielectric in complementary metal oxide semiconductor (CMOS) electronics, fully solution-induced In2O3 TFTs based on ZrO2 dielectrics have been integrated and investigated. The devices, with an optimized annealing temperature of 300 degrees C, have demonstrated high electrical performance and operational stability at a low voltage of 2 V, including a high mu sat of 4.42 cm(2) V-1 s(-1), low threshold voltage of 0.31 V, threshold voltage shift of 0.15 V under positive bias stress for 7200 s, and large I-on/I-off of 7.5 x 10(7), respectively. The as-fabricated In2O3/ZrOx TFTs enable fully solution-derived oxide TFTs for potential application in portable and low-power consumption electronics.
Enhancement on the Performance of Eco-Friendly Solution-Processed InO/AlO Thin-Film Transistors Via Lithium Incorporation

Tianshi Zhao,Chun Zhao,Jianfu Zhang,Ivona Z. Mitrovic,Eng Gee Lim,Li Yang,Tao Song,Cezhou Zhao

DOI: https://doi.org/10.1016/j.jallcom.2020.154458

IF: 6.2

2020-01-01

Journal of Alloys and Compounds

Abstract:Solution-processed fabrication of thin-film transistors (TFTs) has low cost and roll-to-roll capability. Indium oxide is one of the promising materials for the metal oxide semiconductor layer in TFTs. Early works used high temperature (similar to 700 degrees C) anneal, which is not suitable for flexible substrates. The toxic solvents, such as 2-methoxyethanol (2-Me), have been widely used in the preparation of precursor solutions. To overcome these challenges, we propose a low temperature (<= 250 degrees C) and an eco-friendly process through the incorporation of lithium. Both X-ray photoelectron spectroscopy and electrical characterizations were carried out to optimize the process. The best result was obtained with 10 at.% lithium incorporation. The high field-effect mobility, averaged over 30 devices, is 21.6 cm(2) V-1 s(-1), which is 380% higher than the groups without lithium incorporation and is higher than or comparable with those reported by early works for the low-temperature solution prepared InO films. They were used to build an inverter successfully. Moreover, the bias stability of the transistors was also proved to be improved through lithium doping. This eco-friendly solution process has the potential for low-cost fabrication of TFTs on the flexible substrate. (C) 2020 Elsevier B.V. All rights reserved.
Ultralow-Thermal-Budget-Driven IWO-Based Thin-Film Transistors and Application Explorations

Shanshan Jiang,Gang He,Wenhao Wang,Minmin Zhu,Zhengquan Chen,Qian Gao,Yanmei Liu

DOI: https://doi.org/10.3390/nano12183243

IF: 5.3

2022-09-19

Nanomaterials

Abstract:Exploiting multifunctional thin film transistors (TFTs) by low-temperature manufacturing strategy is a crucial step toward flexible electronics. Herein, a multifunctional indium–tungsten-oxide (IWO)-based TFT, gated by solid-state chitosan electrolyte membrane, is fabricated on paper substrate at room temperature. The chitosan exhibits a high specific electric-double-layer capacitance of 2.0 μF cm−2 due to the existence of mobile protons. The IWO-based TFT possesses excellent electrical properties, including a low threshold voltage of 0.2 V, larger current switching ratio of 1.3 × 106, high field effect mobility of 15.0 cm2 V−1s−1, and small subthreshold swing of 117 mV/decade, respectively. Multifunctional operations including inverter, Schmitt triggers, and NAND gate are successfully demonstrated. As an example of information processing, the essential signal transmission functions of biological synapses also be emulated in the fabricated IWO-based TFTs. The experimental results indicate that such flexible IWO-based TFTs on low-cost and biodegradable paper provide the new-concept building blocks for flexible electronics.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Toward Ultrathin: Advances in Solution-Processed Organic Semiconductor Transistors

Ti Wu,Lin Tan,Yuguang Feng,Luyao Zheng,Yongpeng Li,Shengtao Sun,Shengzhen Liu,Jin Cao,Zhaohui Yu

DOI: https://doi.org/10.1021/acsami.4c11824

IF: 9.5

2024-11-01

ACS Applied Materials & Interfaces

Abstract:In recent years, organic semiconductor (OSC) ultrathin films and their solution-processed organic field-effect transistors (OFETs) have garnered attention for their high flexibility, light weight, solution processability, and tunable optoelectronic properties. These features make them promising candidates for next-generation optoelectronic applications. An ultrathin film typically refers to a film thickness of less than 10 nm, i.e., several molecular layers, which poses challenges for OSC...

materials science, multidisciplinary,nanoscience & nanotechnology
Solution-Processed Zinc Oxide Thin-Film Transistors with a Low-Temperature Polymer Passivation Layer

Xiaoli Xu,Linrun Feng,Shasha He,Yizheng Jin,Xiaojun Guo

DOI: https://doi.org/10.1109/led.2012.2210853

IF: 4.8157

2012-01-01

IEEE Electron Device Letters

Abstract:Bottom-gate top-contact zinc oxide (ZnO) thin-film transistors were fabricated with a low annealing temperature (150 °C) using ammine-hydroxo zinc precursors. The unpassivated devices present profound hysteresis in the measured current-voltage characteristics and a negative output conductance, which were attributed to the interaction of back surface with the oxygen molecules in the ambient atmosphere. To suppress the ambient influence without impacting the device's intrinsic performance, a simple low-temperature (75 °C ) solution-based passivation approach with polydimethylsiloxane was developed. The passivated devices present typical field-effect transistor behaviors of greatly improved device performance.
Facile Route for Low-temperature Eco-friendly Solution Processed ZnSnO Thin-film Transistors

Tianshi Zhao,Chun Zhao,Ivona Z. Mitrovic,Eng Gee Lim,Li Yang,Chenghu Qiu,Ce Zhou Zhao

DOI: https://doi.org/10.1109/irps45951.2020.9128329

2020-01-01

Abstract:In this work, solution processed zinc tin oxide semiconductor films were investigated. Different from the widely reported high-temperature and toxic organic solvent-based fabrication process, a low temperature and eco-friendly aqueous solvent-based route was studied. The optimization of electrical performances on field effect mobility and reliability was proved. Moreover, a resistor-loaded inverter was constructed.
Low-voltage Zinc Oxide Thin-Film Transistors with Solution-Processed Channel and Dielectric Layers below 150 °C

Xiaoli Xu,Qingyu Cui,Yizheng Jin,Xiaojun Guo

DOI: https://doi.org/10.1063/1.4769091

IF: 4

2012-01-01

Applied Physics Letters

Abstract:In this letter, solution processed low voltage (<3 V) zinc oxide (ZnO) thin-film transistors with the maximum process temperature not exceeding 150 °C were achieved. In the devices, an ultra-thin zirconium oxide layer was formed as the gate dielectric via ultraviolet irradiation assisted sol-gel processes, and the ZnO channel was processed from an aqueous precursor of ammine-hydroxo zinc complex. The devices can be operated under a voltage of 3 V, and show decent device performance with the field effect mobility of 0.45 cm2/V · s and an ON/OFF current ratio of 105.
Eco-Friendly and Biodegradable Biopolymer Chitosan/Y2O3 Composite Materials in Flexible Organic Thin-Film Transistors

Bo-Wei Du,Shao-Ying Hu,Ranjodh Singh,Tsung-Tso Tsai,Ching-Chang Lin,Fu-Hsiang Ko

DOI: https://doi.org/10.3390/ma10091026

IF: 3.4

2017-09-03

Materials

Abstract:The waste from semiconductor manufacturing processes causes serious pollution to the environment. In this work, a non-toxic material was developed under room temperature conditions for the fabrication of green electronics. Flexible organic thin-film transistors (OTFTs) on plastic substrates are increasingly in demand due to their high visible transmission and small size for use as displays and wearable devices. This work investigates and analyzes the structured formation of aqueous solutions of the non-toxic and biodegradable biopolymer, chitosan, blended with high-k-value, non-toxic, and biocompatible Y2O3 nanoparticles. Chitosan thin films blended with Y2O3 nanoparticles were adopted as the gate dielectric thin film in OTFTs, and an improvement in the dielectric properties and pinholes was observed. Meanwhile, the on/off current ratio was increased by 100 times, and a low leakage current was observed. In general, the blended chitosan/Y2O3 thin films used as the gate dielectric of OTFTs are non-toxic, environmentally friendly, and operate at low voltages. These OTFTs can be used on surfaces with different curvature radii because of their flexibility.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
Synthesis of ZnO Nanowires for Thin Film Network Transistors

S. H. Dalal,H. E. Unalan,Y. Zhang,Pritesh Hiralal,L. Gangloff,Andrew J. Flewitt,Gehan A. J. Amaratunga,William I. Milne

DOI: https://doi.org/10.1117/12.799598

2008-01-01

Abstract:Zinc oxide nanowire networks are attractive as alternatives to organic and amorphous semiconductors due to their wide bandgap, flexibility and transparency. We demonstrate the fabrication of thin film transistors (TFT)s which utilize ZnO nanowires as the semiconducting channel. These thin film transistors can be transparent and flexible and processed at low temperatures on to a variety of substrates. The nanowire networks are created using a simple contact transfer method that is easily scalable. Apparent nanowire network mobility values can be as high as 3.8 cm(2)/VS (effective thin film mobility: 0.03 cm(2)/VS) in devices with 20 mu m channel lengths and ON/OFF ratios of up to 10(4).
Low‐Temperature, Nontoxic Water‐Induced Metal‐Oxide Thin Films and Their Application in Thin‐Film Transistors

Guoxia Liu,Ao Liu,Huihui Zhu,Byoungchul Shin,Elvira Fortunato,Rodrigo Martins,Yiqian Wang,Fukai Shan

DOI: https://doi.org/10.1002/adfm.201500056

IF: 19

2015-01-01

Advanced Functional Materials

Abstract:Here, a simple, nontoxic, and inexpensive “water‐inducement” technique for the fabrication of oxide thin films at low annealing temperatures is reported. For water‐induced (WI) precursor solution, the solvent is composed of water without additional organic additives and catalysts. The thermogravimetric analysis indicates that the annealing temperature can be lowered by prolonging the annealing time. A systematic study is carried out to reveal the annealing condition dependence on the performance of the thin‐film transistors (TFTs). The WI indium‐zinc oxide (IZO) TFT integrated on SiO2 dielectric, annealed at 300 °C for 2 h, exhibits a saturation mobility of 3.35 cm2 V−1 s−1 and an on‐to‐off current ratio of ≈108. Interestingly, through prolonging the annealing time to 4 h, the electrical parameters of IZO TFTs annealed at 230 °C are comparable with the TFTs annealed at 300 °C. Finally, fully WI IZO TFT based on YOx dielectric is integrated and investigated. This TFT device can be regarded as “green electronics” in a true sense, because no organic‐related additives are used during the whole device fabrication process. The as‐fabricated IZO/YOx TFT exhibits excellent electron transport characteristics with low operating voltage (≈1.5 V), small subthreshold swing voltage of 65 mV dec−1 and the mobility in excess of 25 cm2 V−1 s−1.
Fully solution-processed low-voltage aqueous In2O3 thin-film transistors using an ultrathin ZrO(x) dielectric.

Ao Liu,Guo Xia Liu,Hui Hui Zhu,Feng Xu,Elvira Fortunato,Rodrigo Martins,Fu Kai Shan

DOI: https://doi.org/10.1021/am505602w

IF: 9.5

2014-01-01

ACS Applied Materials & Interfaces

Abstract:We reported here "aqueous-route" fabrication of In2O3 thin-film transistors (TFTs) using an ultrathin solution-processed ZrOx dielectric thin film. The formation and properties of In2O3 thin films under various annealing temperatures were intensively examined by thermogravimetric analysis, Fourier transform infrared spectroscopy, and atomic force microscopy. The solution-processed ZrOx thin film followed by sequential UV/ozone treatment and low-temperature thermal-annealing processes showed an amorphous structure, a low leakage-current density (∼1 × 10(-9) A/cm(2) at 2 MV/cm), and a high breakdown electric field (∼7.2 MV/cm). On the basis of its implementation as the gate insulator, the In2O3 TFTs based on ZrOx annealed at 250 °C exhibit an on/off current ratio larger than 10(7), a field-effect mobility of 23.6 cm(2)/V·s, a subthreshold swing of 90 mV/decade, a threshold voltage of 0.13 V, and high stability. These promising properties were obtained at a low operating voltage of 1.5 V. These results suggest that "aqueous-route" In2O3 TFTs based on a solution-processed ZrOx dielectric could potentially be used for low-cost, low-temperature-processing, high-performance, and flexible devices.
Study of zinc tin oxide thin-film transistor

Xiong Wang,Cai Xi-Kun,Yuan Zi-Jian,Zhu Xia-Ming,Qiu Dong-Jiang,Wu Hui-Zhen

DOI: https://doi.org/10.7498/aps.60.037305

2011-01-01

Abstract:Thin film transistors with zinc tin oxide as the active channel layer were fabricated on ITO glass by rf magnetron sputtering. SiO 2 gate dielectric was grown using plasma-enhanced chemical vapor deposition (PECVD). These devices operate with a maximum field effect mobility of 9.1 cm 2/V · s, threshold voltage of -2 V, and current on/off ratio of 10 4. © 2011 Chinese Physical Society.
Fabrication of Zinc Oxide Thin Film Transistors via Low-Temperature Solution Processing

Lin-feng Lan,Wei Song,Wen Shi,Jun-biao

DOI: https://doi.org/10.3969/j.issn.1000-565X.2015.03.015

2015-01-01

Abstract:In order to meet the requirements of novel display technologies such as flexible active-matrix organic light-emitting diodes (AMOLED),thin film transistors (TFTs)are fabricated,with low-temperature solution-pro-cessed ZnO as the semiconductor layer and with electrochemical oxidized alumina neodymium as the gate dielectric layer.In the preparation of ZnO semiconductor layer,carbon-free aqueous Zn(OH)x (NH3 )y(2 -x)+ solution with low cost and fabrication simplicity is employed,and,more importantly,the energy for metal-ammine dissociation and ZnO formation is rather low thanks to the highly activated hydroxyl radicals.As a result,ZnO polycrystalline films can be realized at a relatively low temperature,namely 1 80℃.The proposed low-temperature solution-pro-cessed ZnO fabrication method combining with room-temperature electrochemically-oxidized gate dielectric layer helps achieve high mobility up to 0.9 cm2 /(V·s),and is completely compatible with flexible substrates,so that it meets the demand of flexible electronic devices well.
Eco-Friendly, Low-temperature Solution-processed InO/ A1oThin-film Transistor with Li - incorporation

T S Zhao,C Zhao,C Z Zhao,W Y Xu,L Yang,I Z Mitrovic,S Hall,E G Lim,S C Yu

DOI: https://doi.org/10.1109/EUROSOI-ULIS45800.2019.9041879

2019-01-01

Abstract:In this work, we investigate an eco-friendly route of fabricating solution-processed thin-film transistors (TFTs). With Li incorporation in the indium oxide (InO) semiconductor layer, the annealing temperature can be lowered to 200°C. The combination with a solution processed high-k aluminum oxide (A1O) dielectric layer, produces a TFT field effect mobility with average value of 20.5 cm 2 ·V −1 ·s −1 from 30 samples, which is a promising result for future applications.
Recent advances in ZnO transparent thin film transistors

E. Fortunato,P. Barquinha,A. Pimentel,A. Gonçalves,A. Marques,L. Pereira,R. Martins

DOI: https://doi.org/10.1016/j.tsf.2005.01.066

IF: 2.1

2005-09-01

Thin Solid Films

Abstract:Zinc oxide is a well-known wide band gap semiconductor material (3.4 eV at room temperature, in the crystalline form), which has many applications, such as for transparent conductors, varistors, surface acoustic waves, gas sensors, piezoelectric transducers and UV detectors. More recently, it is attracting considerable attention for its possible application to thin film transistors. In this paper, we present some of the recent results already obtained as well as the ones that are being developed in our laboratory. The main advantage presented by these new thin film transistors is the combination of high channel mobility and transparency produced at room temperature which makes these thin film transistors a very promising low cost device for the next generation of invisible and flexible electronics. Moreover, the processing technology used to fabricate this device is relatively simple and it is compatible with inexpensive plastic/flexible substrate technology.

materials science, multidisciplinary,physics, applied, condensed matter, coatings & films
Water-Processed Ultrathin Crystalline Indium–Boron–Oxide Channel for High-Performance Thin-Film Transistor Applications

Wangying Xu,Tao Peng,Yujia Li,Fang Xu,Yu Zhang,Chun Zhao,Ming Fang,Shun Han,Deliang Zhu,Peijiang Cao,Wenjun Liu,Youming Lu

DOI: https://doi.org/10.3390/nano12071125

IF: 5.3

2022-03-29

Nanomaterials

Abstract:Thin-film transistors (TFTs) made of solution-processable transparent metal oxide semiconductors show great potential for use in emerging large-scale optoelectronics. However, current solution-processed metal oxide TFTs still suffer from relatively poor device performance, hindering their further advancement. In this work, we create a novel ultrathin crystalline indium–boron–oxide (In-B-O) channel layer for high-performance TFTs. We show that high-quality ultrathin (~10 nm) crystalline In-B-O with an atomically smooth nature (RMS: ~0.15 nm) could be grown from an aqueous solution via facile one-step spin-coating. The impacts of B doping on the physical, chemical and electrical properties of the In2O3 film are systematically investigated. The results show that B has large metal–oxide bond dissociation energy and high Lewis acid strength, which can suppress oxygen vacancy-/hydroxyl-related defects and alleviate dopant-induced carrier scattering, resulting in electrical performance improvement. The optimized In-B-O (10% B) TFTs based on SiO2/Si substrate demonstrate a mobility of ~8 cm2/(V s), an on/off current ratio of ~106 and a subthreshold swing of 0.86 V/dec. Furthermore, by introducing the water-processed high-K ZrO2 dielectric, the fully aqueous solution-grown In-B-O/ZrO2 TFTs exhibit excellent device performance, with a mobility of ~11 cm2/(V s), an on/off current of ~105, a subthreshold swing of 0.19 V/dec, a low operating voltage of 5 V and superior bias stress stability. Our research opens up new avenues for low-cost, large-area green oxide electronic devices with superior performance.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
Eco-Friendly Water-Induced Aluminum Oxide Dielectrics and Their Application in A Hybrid Metal Oxide/Polymer Tft

Ao Liu,Guoxia Liu,Huihui Zhu,Byoungchul Shin,Elvira Fortunato,Rodrigo Martins,Fukai Shan

DOI: https://doi.org/10.1039/c5ra15370k

IF: 4.036

2015-01-01

RSC Advances

Abstract:Solution-processed oxide semiconductors have been widely studied with the objective of achieving high-performance, sustainable and low-cost electronic devices. In this report a simple and eco-friendly water-inducement method has been developed to fabricate high-k dielectrics and hybrid thin-film transistors (TFTs); introducing metal nitrates and deionized water as the precursor materials. The AlOx dielectric films annealed at temperatures higher than 350 degrees C result in low leakage current densities and the dielectric constants are nearly 7. Instead of the conventional oxide semiconductors, water-induced (WI) polyvinylprrolidone (PVP) was introduced into the In2O3 solution to form a hybrid metal oxide/polymer channel layer. The 250 degrees C-annealed WI In2O3 : PVP TFTs based on AlOx dielectric exhibit outstanding electrical performances and high stability. These promising properties were obtained at an ultra-low operating voltage of 2 V. The WI metal oxide/polymer hybrid TFTs are promising alternatives for applications in low-cost, low-consumption and eco-friendly flexible electronics.
Solution-processed zinc oxide thin films and top-gate thin film transistors

WANG Xiao-Yan,DONG Gui-Fang,Juan Qiao,WANG Li-Duo,Yong Qiu

2009-01-01

Chinese journal of inorganic chemistry

Abstract:ZnO thin films were prepared by spin-coating the precursor solution with different concentrations. The morphologies and crystallinity of the ZnO films were characterized by Atomic Force Microscopy (AFM) and X-ray Diffraction (XRD). Multilayer ZnO films were employed as active layers to prepare thin film transistors (TFTs), and patterned indium tin oxide (ITO) was used as source and drain electrodes. The device based on the three-layer ZnO films, prepared with the precursor concentration order of 0.25, 0.10 and 0.05 mol.L-1, showed higher mobility of 7.1 x 10(-3) cm(2).V-1.s(-1) than the device with the precursor concentration order of 0.05, 0.10 and 0.25 mol.L-1 (5.2 x 10(-3) cm(2).V-1.s(-1)). The difference of the performance of TFTs based on these two kinds of films Is attributed to the roughness of the multilayer ZnO thin films. Smooth film is useful for forming excellent semiconductor/insulator interface, resulting in high mobility.
In Situ One-Step Synthesis of P-Type Copper Oxide for Low-Temperature, Solution-Processed Thin-Film Transistors

Ao Liu,Shengbin Nie,Guoxia Liu,Huihui Zhu,Chundan Zhu,Byoungchul Shin,Elvira Fortunato,Rodrigo Martins,Fukai Shan

DOI: https://doi.org/10.1039/c7tc00574a

IF: 6.4

2017-01-01

Journal of Materials Chemistry C

Abstract:Solution-processed p-type Cu2O thin films were fabricatedvia in-situreaction of CuI film in NaOH solution and their applications in thin-film transistors were successfully demonstrated.

Eco-friendly, Solution-Processed In-W-O Thin Films and Their Applications in Low-Voltage, High-Performance Transistors

Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters

Fully solution-induced high performance indium oxide thin film transistors with ZrOx high-k gate dielectrics

Enhancement on the Performance of Eco-Friendly Solution-Processed InO/AlO Thin-Film Transistors Via Lithium Incorporation

Ultralow-Thermal-Budget-Driven IWO-Based Thin-Film Transistors and Application Explorations

Toward Ultrathin: Advances in Solution-Processed Organic Semiconductor Transistors

Solution-Processed Zinc Oxide Thin-Film Transistors with a Low-Temperature Polymer Passivation Layer

Facile Route for Low-temperature Eco-friendly Solution Processed ZnSnO Thin-film Transistors

Low-voltage Zinc Oxide Thin-Film Transistors with Solution-Processed Channel and Dielectric Layers below 150 °C

Eco-Friendly and Biodegradable Biopolymer Chitosan/Y2O3 Composite Materials in Flexible Organic Thin-Film Transistors

Synthesis of ZnO Nanowires for Thin Film Network Transistors

Low‐Temperature, Nontoxic Water‐Induced Metal‐Oxide Thin Films and Their Application in Thin‐Film Transistors

Fully solution-processed low-voltage aqueous In2O3 thin-film transistors using an ultrathin ZrO(x) dielectric.

Study of zinc tin oxide thin-film transistor

Fabrication of Zinc Oxide Thin Film Transistors via Low-Temperature Solution Processing

Eco-Friendly, Low-temperature Solution-processed InO/ A1oThin-film Transistor with Li - incorporation

Recent advances in ZnO transparent thin film transistors

Water-Processed Ultrathin Crystalline Indium–Boron–Oxide Channel for High-Performance Thin-Film Transistor Applications

Eco-Friendly Water-Induced Aluminum Oxide Dielectrics and Their Application in A Hybrid Metal Oxide/Polymer Tft

Solution-processed zinc oxide thin films and top-gate thin film transistors

In Situ One-Step Synthesis of P-Type Copper Oxide for Low-Temperature, Solution-Processed Thin-Film Transistors