Abstract:Flexible wearable electronics have been developing rapidly in recent years, and one of its core devices, thin‐film transistor (TFT), is also attracting attention. Current TFT preparation processes usually require high annealing temperatures (>350°C), which is not conducive to their application on most flexible substrates (PET, PEN and nanopaper, etc.). In this paper, we propose a strategy for the room temperature preparation of Nd:AIZO/Al2O3 dual‐layer TFT devices, which have appreciable electrical properties without additional annealing treatment. We have used Taguchi orthogonal experimental methods to investigate the effects of three essential process parameters on the performance of the films and devices. We analyze the test results of XRR, μ‐PCD, XPS of the films and correlate them with TFTs electrical performance. As Nd:AIZO deposition time decreases and Al2O3 oxygen percentage and time during deposition increase, the μsat and SS of TFT devices are improved. With the preferred combination of parameters applied to the device preparation, the device exhibits a saturation mobility μsat of 24.3 cm2V‐1s‐1, a threshold voltage Vth of ‐1.4 V, a subthreshold swing SS of 0.21 V/decade and an Ion/Ioff ratio of 4.26×108. The ultra‐thin Al2O3 layer act as defect modification and form high‐speed electron transport in channel layer. This dual‐layer structure reduced the localized defect states in the back‐channel region and the water‐oxygen adsorption. The room temperature preparation of the dual‐layer TFT process proposed in this paper is compatible with large‐size low‐cost flexible substrates. It has great potential for application in green flexible wearable electronics. This article is protected by copyright. All rights reserved.

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