Solution‐Processed Alkaline Lithium Oxide Dielectrics for Applications in N‐ and P‐type Thin‐Film Transistors
Ao Liu,Guoxia Liu,Chundan Zhu,Huihui Zhu,Elvira Fortunato,Rodrigo Martins,Fukai Shan
DOI: https://doi.org/10.1002/aelm.201600140
IF: 6.2
2016-01-01
Advanced Electronic Materials
Abstract:High‐k alkaline lithium oxide (LiOx) thin films are fabricated by spin‐coating method. The LiOx thin films are annealed at different temperatures and characterized by various techniques. An optimized LiOx dielectric is achieved at an annealing temperature of 300 °C and exhibits wide bandgap of ≈5.5 eV, smooth surface, relatively permittivity of ≈6.7, and low leakage current density. The as‐fabricated LiOx thin films are integrated, as gate dielectrics, in both n‐channel indium oxide (In2O3) and p‐channel cupric oxide (CuO) transistors. The optimized In2O3/LiOx thin‐film transistor (TFT) exhibits high performance and high stability, such as Ion/Ioff of 107, electron mobility of 5.69 cm2 V−1 s−1, subthreshold swing of 70 mV dec−1, negligible hysteresis, and threshold voltage shift of 0.1 V under bias stress for 1.5 h. Meanwhile, the p‐channel CuO TFT based on LiOx dielectric shows high Ion/Ioff of 105 and hole mobility of 1.72 cm2 V−1 s−1. All the electrical performances are achieved at an ultra‐low operating voltage of 2 V. Considering the simple procedure, the moderate annealing temperature, and the low power consumption merits, these outstanding characteristics represent a significant advance toward the development of battery compatible and portable electronics.