Abstract:Abstract High-speed visible light communication (VLC), as a cutting-edge supplementary solution in 6G to traditional radio-frequency communication, is expected to address the tension between continuously increased demand of capacity and currently limited supply of radio-frequency spectrum resource. The main driver behind the high-speed VLC is the presence of light emitting diode (LED) which not only offers energy-efficient lighting, but also provides a cost-efficient alternative to the VLC transmitter with superior modulation potential. Particularly, the InGaN/GaN LED grown on Si substrate is a promising VLC transmitter to simultaneously realize effective communication and illumination by virtue of beyond 10-Gbps communication capacity and Watt-level output optical power. In previous parameter optimization of Si-substrate LED, the superlattice interlayer (SL), especially its period number, is reported to be the key factor to improve the lighting performance by enhancing the wall-plug efficiency, but few efforts were made to investigate the influence of SLs on VLC performance. Therefore, to optimize the VLC performance of Si-substrate LEDs, we for the first time investigated the impact of the SL period number on VLC system through experiments and theoretical derivation. The results show that more SL period number is related to higher signal-to-noise ratio (SNR) via improving the wall-plug efficiency. In addition, by using Levin-Campello bit and power loading technology, we achieved a record-breaking data rate of 3.37 Gbps over 1.2-m free-space VLC link under given optimal SL period number, which, to the best of our knowledge, is the highest data rate for a Si-substrate LED-based VLC system.

Performance Improvement of Vlc System Using Gan-Based Leds with Strain Relief Layers

Performance Improvement of GaN-based LEDs with Step Stage InGaN/GaN Strain Relief Layers in GaN-based Blue LEDs.

Performance Improvement of Gan-Based Near-Uv Leds with Ingan/Algan Superlattices Strain Relief Layer and Algan Barrier

Improving the Modulation Bandwidth of GaN‐Based Light‐Emitting Diodes for High‐Speed Visible Light Communication: Countermeasures and Challenges

High-speed visible light communication systems based on Si-substrate LEDs with multiple superlattice interlayers

A Compensation Approach of LED Nonlinearity Based on Efficiency Evaluation in a Visible Light Communication System

Efficiency Droop Effects of GaN-based Light-Emitting Diodes on the Performance of Code Division Multiple Access Visible-Light Communication System

Si-substrate LEDs with Multiple Superlattice Interlayers for Beyond 24 Gbps Visible Light Communication

Performance Improvement of InGaN LEDs by Using Strain Compensated Last Quantum Barrier and Electron Blocking Layer

Improving the Modulation Bandwidth of LED by CdSe/ZnS Quantum Dots for Visible Light Communication

Embedded Electrode Micro-LEDs with High Modulation Bandwidth for Visible Light Communication

Large Modulation Bandwidth GaN-based Micro-Led Arrays on Si Substrates with Graded in Composition Barriers

Utilizing Cdse/Zns Core/Shell Qds to Improve the Modulation Bandwidth of Wled for Visible Light Communication

GaN-Based Freestanding Micro-LEDs with GHz Bandwidth and Low Efficiency Droop for Visible Light Communication

Experimental investigation of high-speed WDM-visible light communication using blue, green, and red InGaN µLEDs

The Efficiency Droop Impact of GaN‐based LEDs on the Performance of OFDM Visible Light Communication System

Demonstration of Graphene/GaN-Based Micro-LEDs Arrays for Visible Light Communication

Comparison of Beyond 1 GHz C-Plane Freestanding and Sapphire-Substrate GaN-Based Micro-Leds for High-Speed Visible Light Communication

GaN-Based Cascade Micro Light-Emitting Diode in Parallel and Series Arrays for Visible Light Communication

Efficiency enhancement mechanism of piezoelectric effect in long-wavelength InGaN-based LED

Physics-Based Modeling of GaN MQW LED for Visible Light Communication Systems