Abstract:Long-wavelength light-emitting diode (LED) devices in the visible band (>492 nm) and their applications in highspeed visible light communication (VLC) have attracted tremendous research interest recently. The electrical-to-optical (E-O) bandwidth of conventional c-plane long-wavelength LEDs is limited by carrier lifetime in InGaN quantum well (QW), which is a fundamental problem limiting the data rate of high-speed VLC systems. In order to achieve an over GHz E-O bandwidth for applicable packaged LEDs, it is necessary to innovate from the material level in the active region. This work aims to break through the modulation bandwidth bottleneck of VLC systems based on green micro-LED. Commercial LEDs suffer a very limited E-O bandwidth due to their long radiative recombination carrier lifetime and large resistance-capacitance delay. Herein, by the utilization of green InGaN quantum dots (QDs) as the active region of microLED, this constraint can be remarkably alleviated. Green micro-LEDs containing five layers of InGaN QDs are fabricated, packaged, and then applied in a line-of-sight (LOS) VLC system over a 2 m free-space channel. The VLC system based on a single-pixel 50 and 75-mu m diameter green micro-LEDs can achieve high modulation bandwidths up to 1.22 and 1.14 GHz, respectively. Then, real-time non-return-to-zero on-off keying (NRZ-OOK) and offline pulse-amplitude modulation four-level (PAM-4) as two common schemes in short-distance optical communication are adopted to evaluate the VLC system performances. A real-time 2.1 Gbps NRZOOK and an offline 5 Gbps PAM-4 VLC links are achieved with BERs of 2.74 x 10(-3) and 1.88 x 10(-3) above the forward error correction (FEC) criterion of 3.8 x 10(-3), respectively. To the best of our knowledge, this is the highest-recorded modulation bandwidth and communication rate for a single-pixel green micro-LED-based VLC system.

Physics-Based Modeling of GaN MQW LED for Visible Light Communication Systems

GaN-Based Freestanding Micro-LEDs with GHz Bandwidth and Low Efficiency Droop for Visible Light Communication

Research on the Equivalent Analysis Model of a GaN LED Used as Receiver

Improving the Modulation Bandwidth of GaN‐Based Light‐Emitting Diodes for High‐Speed Visible Light Communication: Countermeasures and Challenges

31.38 Gb/s GaN-based LED Array Visible Light Communication System Enhanced with V-pit and Sidewall Quantum Well Structure

Improved AlGaN–GaN MQW LED performance incorporating InAlN MLB and AlN back barrier: Li-Fi applications

GaN-based Parallel Micro-Light-emitting Diode Arrays with Dual-Wavelength InxGa1-xN/GaN MQWs for Visible Light Communication

High Bandwidth GaN-Based Micro-LEDs for Multi-Gb/s Visible Light Communications

White-Light GaN-μLEDs Employing Green/Red Perovskite Quantum Dots as Color Converters for Visible Light Communication

Modelling Charge Transport and Electro-Optical Characteristics of Quantum Dot Light-Emitting Diodes

Improving Modulation Bandwidth of C-Plane GaN-based Light-Emitting Diodes by an Ultra-Thin Quantum Wells Design.

Multigigabit Visible Light Communication Based on High-Bandwidth InGaN Quantum Dot Green Micro-LED

Comparison of Beyond 1 GHz <italic>C</italic>-Plane Freestanding and Sapphire-Substrate GaN-Based micro-LEDs for High-Speed Visible Light Communication

GaN-Based Cascade Micro Light-Emitting Diode in Parallel and Series Arrays for Visible Light Communication

Impedance Characteristics Study of Packaged InGaN QD-based Micro-LED for Visible Light Communication

Electrothermal Modeling of Monolithically Integrated GaN-Based μLED Devices

Large-signal Modulation Characteristics of a GaN-based Micro-Led for Gbps Visible-Light Communication

580-Nm-thick Vertical-Structure Light-Emitting Diode for Visible Light Communication

Hybrid GaN LED with capillary-bonded II–VI MQW color-converting membrane for visible light communications

1.3 GHz E-O Bandwidth GaN-based Micro-Led for Multi-Gigabit Visible Light Communication

Demonstration of Graphene/GaN-Based Micro-LEDs Arrays for Visible Light Communication