Abstract:Long-wavelength light-emitting diode (LED) devices in the visible band (>492 nm) and their applications in highspeed visible light communication (VLC) have attracted tremendous research interest recently. The electrical-to-optical (E-O) bandwidth of conventional c-plane long-wavelength LEDs is limited by carrier lifetime in InGaN quantum well (QW), which is a fundamental problem limiting the data rate of high-speed VLC systems. In order to achieve an over GHz E-O bandwidth for applicable packaged LEDs, it is necessary to innovate from the material level in the active region. This work aims to break through the modulation bandwidth bottleneck of VLC systems based on green micro-LED. Commercial LEDs suffer a very limited E-O bandwidth due to their long radiative recombination carrier lifetime and large resistance-capacitance delay. Herein, by the utilization of green InGaN quantum dots (QDs) as the active region of microLED, this constraint can be remarkably alleviated. Green micro-LEDs containing five layers of InGaN QDs are fabricated, packaged, and then applied in a line-of-sight (LOS) VLC system over a 2 m free-space channel. The VLC system based on a single-pixel 50 and 75-mu m diameter green micro-LEDs can achieve high modulation bandwidths up to 1.22 and 1.14 GHz, respectively. Then, real-time non-return-to-zero on-off keying (NRZ-OOK) and offline pulse-amplitude modulation four-level (PAM-4) as two common schemes in short-distance optical communication are adopted to evaluate the VLC system performances. A real-time 2.1 Gbps NRZOOK and an offline 5 Gbps PAM-4 VLC links are achieved with BERs of 2.74 x 10(-3) and 1.88 x 10(-3) above the forward error correction (FEC) criterion of 3.8 x 10(-3), respectively. To the best of our knowledge, this is the highest-recorded modulation bandwidth and communication rate for a single-pixel green micro-LED-based VLC system.

Improved AlGaN–GaN MQW LED performance incorporating InAlN MLB and AlN back barrier: Li-Fi applications

GaN-Based Freestanding Micro-LEDs with GHz Bandwidth and Low Efficiency Droop for Visible Light Communication

Physics-Based Modeling of GaN MQW LED for Visible Light Communication Systems

Multi-Gb/s visible light communication based on AlGaInP amber micro-LED

Improving the Modulation Bandwidth of GaN‐Based Light‐Emitting Diodes for High‐Speed Visible Light Communication: Countermeasures and Challenges

High-efficiency Near-Uv Light-Emitting Diodes on Si Substrates with InGaN/GaN/AlGaN/GaN Multiple Quantum Wells

Multigigabit Visible Light Communication Based on High-Bandwidth InGaN Quantum Dot Green Micro-LED

Transmission data rate improvement by InGaN barriers in GaN-based blue micro-LEDs for visible light communication

GaN-based Parallel Micro-Light-emitting Diode Arrays with Dual-Wavelength InxGa1-xN/GaN MQWs for Visible Light Communication

Large Modulation Bandwidth GaN-based Micro-Led Arrays on Si Substrates with Graded in Composition Barriers

High Bandwidth GaN-Based Micro-LEDs for Multi-Gb/s Visible Light Communications

Realization of Highly Efficient InGaN Green LEDs with Sandwich-like Multiple Quantum Well Structure: Role of Enhanced Interwell Carrier Transport

Si-substrate LEDs with Multiple Superlattice Interlayers for Beyond 24 Gbps Visible Light Communication

Experimental Demonstration of Non-Line-of-sight Visible Light Communication with Different Reflecting Materials Using a GaN-based Micro-Led and Modified IEEE 802.11Ac

The marvelous optical performance of AlGaN-based deep ultraviolet light-emitting diodes with AlInGaN-based last quantum barrier and step electron blocking layer

Improving Modulation Bandwidth of C-Plane GaN-based Light-Emitting Diodes by an Ultra-Thin Quantum Wells Design.

Structural and optical properties of violet InGaN/AlInGaN light-emitting diodes grown by MOCVD

Enhancing GaN LED Efficiency with Advanced Quantum Well Structure

Efficiency and radiative recombination rate enhancement in GaN/AlGaN multi-quantum well-based electron blocking layer free UV-LED for improved luminescence

Performance Improvement of InGaN LEDs by Using Strain Compensated Last Quantum Barrier and Electron Blocking Layer

AlGaN-Based Deep UV Communication LED With Superlattice Electron-Blocking Layer at 274 nm