Abstract:Based on 22 nm ultrathin-body fully depleted silicon-on-insulator (UTB-FDSOI) transistors, we propose a novel structure of buried insulator layer aiming at total ionizing dose (TID) effects mitigation. Using technology computer-aided design (TCAD) tools, we focus on the influences of UTB-FDSOI devices with different structures and parameters on TID effects, such as buried oxide (BOX) layer thickness, buried Si3N4 layer, and electron traps. First, we construct four types of UTB-FDSOI N-type metal-oxide semiconductor (NMOS) devices numerically, in which the novel device features a buried silicon-oxidenitride-oxide-silicon (SONOS) structure. Then, the transfer characteristics and trapped charge distribution of these devices are studied under different irradiation doses. It is known that a thinner BOX layer could lead to slighter TID effects, and the buried nitride layer and the electron traps could reduce the TID-induced leakage current (Ioff). Employing these optimization structures for TID effects hardness, the innovative transistor shows much better resistance against TID effects compared to the conventional FDSOI transistors. In addition, the threshold voltage of the novel device could be increased by applying appropriate bias conditions, similar to those of programming SONOS memory, so that the Ioff caused by TID irradiation further decreases. These results provide useful guidance for designers to achieve TID effects mitigation of SOI devices.

Total Dose Effects of 28nm FD-SOI CMOS Transistors

A Stabilized Numerical Scheme to Simulate Synergistic Effect of TID and TDR in Semiconductor Devices

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-Nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2Gate Dielectrics

Simulation of Total Ionizing Dose (TID) Effects Mitigation Technique for 22 Nm Fully-Depleted Silicon-on-Insulator (FDSOI) Transistor.

Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-Nm MOSFETs Irradiated to Ultrahigh Doses

The impact of total ionizing dose on RF performance of 130 nm PD SOI I/O nMOSFETs

An Analytical Study of the Effect of Total Ionizing Dose on Body Current in 130-Nm PDSOI I/O Nmosfets

Total Dose Effects in Tunnel-Diode Body-Contact SOI MOSFETs

Total Ionizing Dose Effect of Gamma Rays on H-gate PDSOI MOS Devices at Different Dose Rates

Impact of Total Ionizing Dose on Radio Frequency Performance of 22 nm Fully Depleted Silicon-On-Insulator nMOSFETs

Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors

Total Ionizing Dose Effects of Deep Submicron Nmosfet Devices

Comparison of Total Ionizing Dose Effects Between Double and Conventional SOI Devices

Effect of Advanced Process on the Total Dose Irradiation of MOS Device

Threshold Voltage Model of Total Ionizing Irradiated Short-Channel FD-SOI MOSFETs with Gaussian Doping Profile

Modeling of Total Ionizing Dose Effect in Submicron MOS Transistor

The Total Dose Irradiation Effects of SOI NMOS Devices under Different Bias Conditions

A Short-Channel SOI MOSFET Model Considering Total Dose Effects

Total ionizing dose and single-event effect in vertical channel double-gate nMOSFETs

Total Dose Γ-Ray Radiation Characteristics of P-channel MOSFET/FIPOS

Study on Total Ionizing Dose Effect of Silicon Carbide Metal Oxide Semiconductor Field-Effect Transistors at High and Low Dose Rates