Abstract:The total dose radiation and annealing responses of the back transistor of Silicon-On-Insulator (SOI) pMOSFETs have been studied by comparing with those of the back transistor of SOI nMOSFETs fabricated on the same wafer. The transistors were irradiated by 60Co {\gamma}-rays with various doses, and the front transistors are biased in a Float-State and Off-State, respectively, during irradiation. The total dose radiation responses of the back transistors are characterized by their threshold voltage shifts. The results show that the total dose radiation response of the back transistor of SOI pMOSFETs, similar to that of SOI nMOSFETs, depends greatly on their bias conditions during irradiation. However, with the Float-State bias, rather than the Off-State bias, the back transistors of SOI pMOSFETs reveal a much higher sensitivity to total dose radiation, which is contrary to those of SOI nMOSFETs. In addition, it is also found that the total dose radiation effect of the back transistor of SOI pMOSFETs irradiated with Off-State bias, as well as that of the SOI nMOSFETs, exhibits an increasing trend as the channel length decreases. The annealing response of the back transistors after irradiation at room temperature without bias, characterized by their threshold voltage shifts, indicates that there is a relatively complex annealing mechanism associated with channel length and type, bias condition during irradiation. In particular, for all the transistors irradiated with Off-State bias, their back transistors show an abnormal annealing effect during early annealing. All the results have been discussed and analyzed in detail by the aid of simulation.

The Total Dose Irradiation Effects of SOI NMOS Devices under Different Bias Conditions

Bias and Geometry Dependence of Total-Ionizing-dose Effects in SOI FinFETs

Comparison of the Total Dose Responses of Fully Depleted SOI Nmosfets with Different Geometries for the Worst Case Bias Conditions

Impact of Process Parameters on Total Ionizing Dose Effect on SOI NMOS

Investigation of Unique Total Ionizing Dose Effects in 0.2 um Partially-Depleted Silicon-on-Insulator Technology

Total Dose Effects with High Dose Rate in NMOS Transistors

An Analytical Study of the Effect of Total Ionizing Dose on Body Current in 130-Nm PDSOI I/O Nmosfets

Total ionizing dose effects in high breakdown voltage SOI devices

Total Ionizing Dose (TID) Effect and Single Event Effect (SEE) in Quasi-Soi Nmosfets

Substrate Effect on Radiation-Induced Charge Trapping in Buried Oxide for Partially-Depleted SOI NMOSFET

Total dose radiation and annealing responses of the back transistor of Silicon-On-Insulator pMOSFETs

Study of Total Ionizing Dose Radiation Effects on Enclosed Gate Transistors in A Commercial Cmos Technology

Impact of Bias Conditions on Total Ionizing Dose Effects of $^{60}{\hbox{co}}\gamma $ in SiGe HBT

Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si

Total Ionizing Dose Effects of Si Vertical Diffused MOSFET with SiO2 and Si3N4/SiO2 Gate Dielectrics

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-Nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2Gate Dielectrics

The Effects of $\gamma$ Radiation-Induced Trapped Charges on Single Event Transient in DSOI Technology.

Total Ionizing Dose Effect Induced Current Degradation for 300V SOI NLDMOS

A study on effects of total ionizing dose on hot carrier effect of PD I/O SOI PMOSFETs

Impact of Back-gate Bias and Body-tie on the DSOI SRAMs under Total Ionizing Dose Irradiation

Study of Bias-Induced Total Ionizing Dose Radiation Damage Mechanism in SiC MOSFETs