Abstract:In this paper, we investigate the total ionizing dose (TID) effects of silicon-on-isolator (SOI) metal-oxidesemiconductor field-effect transistors (MOSFETs) with different sizes by using Co-60 gamma-ray. The SOI MOSFET contains a shallow trench isolation (STI) edge parasitic transistor and back gate parasitic transistor, in which STI oxide and buried oxide (BOX) are used as gate oxide, respectively. Although these parasitic effects are minimized by semiconductor device process, the radiation-induced trapped-charge can lead these parasitic effects to strengthen, thereby affecting the electrical characteristics of the main transistor. Since both the STI and BOX are sensitive to the TID effect, we try to distinguish their different influences on SOI devices in this work. The experimental results show that the characteristic degradation of device originates from the radiation-enhanced parasitic effect. The turning-on of the STI parasitic transistor leads the off-state leakage current to exponentially increase with total dose increasing until the off-state leakage reaches a saturation level. The threshold voltage shift observed in the narrow channel device results from the charge sharing in the STI, while the back gate coupling is a dominant contributor to the threshold voltage shift in short channel device. These results are explained by two simple models. The experimental data are consistent with the model calculation results. We can conclude that the smaller size device is more sensitive to TID effect in the same process. Furthermore, the influence of the negative bias at back gate and body on the radiation effect are also studied. The negative bias at back gate will partially neutralize the effect of positive trapped-charge in STI and that in BOX, thus suppressing the turning-on of STI parasitic transistor and the back gate coupling. The parasitic transistors share a common body region with the main transistor. So exerting body negative bias can increase the threshold voltage of the parasitic transistor, thereby restraining the TID effect. The experimental and simulation results show that the adjustment of the threshold voltage of parasitic transistor by body negative bias is limited due to the thin body region. The modulation of body negative bias in depletion region is more obvious in back gate parasitic transistor than in STI parasitic transistor. The weakening of parasitic conduction in the back channel is more noticeable than at STI sidewall under a body negative bias.

The impact of total ionizing dose on RF performance of 130 nm PD SOI I/O nMOSFETs

Impact of Total Ionizing Dose on Radio Frequency Performance of 22 nm Fully Depleted Silicon-On-Insulator nMOSFETs

Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-Nm Gate-Length Bulk and SOI FinFETs with SiO2/HfO2Gate Dielectrics

Comparing the TID-induced RF performance degradation of floating body and body contacted 130 nm SOI NMOS transistors

An Analytical Study of the Effect of Total Ionizing Dose on Body Current in 130-Nm PDSOI I/O Nmosfets

Gate Bias and Length Dependences of Total Ionizing Dose Effects in InGaAs FinFETs on Bulk Si

Influence of Total Ionizing Dose Irradiation on Low-Frequency Noise Responses in Partially Depleted SOI Nmosfets

Influence of LDD Spacers and H+Transport on the Total-Ionizing-Dose Response of 65-Nm MOSFETs Irradiated to Ultrahigh Doses

Ionization Radiation-Induced Reliability Degradation of SiC Power MOSFET

Comparison of Total Ionizing Dose Effects in 16-nm Core and I/O n-FinFETs

Total-Ionizing-Dose Response of Highly Scaled Gate-All-Around Si Nanowire CMOS Transistors

Investigation of Unique Total Ionizing Dose Effects in 0.2 um Partially-Depleted Silicon-on-Insulator Technology

Degradation Behavior of SiC Trench MOSFETs by Total-Ionizing-dose Irradiation under Gate Voltage Stress

Degradation Induced by Total Ionizing Dose and Hot Carrier Injection in SOI FinFET Devices

Effect of heavy ion irradiation on the RF performance of 0.18μm bulk Si MOSFETs

Research on the Coupling Effect of NBTI and TID for FDSOI pMOSFETs

Study on Total Ionizing Dose Effect of Silicon Carbide Metal Oxide Semiconductor Field-Effect Transistors at High and Low Dose Rates

Total ionizing dose and single-event effect in vertical channel double-gate nMOSFETs

Radiation induced parasitic effect in silicon-on-insulator metal-oxide-semiconductor field-effect transistor

Simulation of Total Ionizing Dose (TID) Effects Mitigation Technique for 22 Nm Fully-Depleted Silicon-on-Insulator (FDSOI) Transistor.

Total Ionizing Dose Effect of Gamma Rays on H-gate PDSOI MOS Devices at Different Dose Rates