Impact of Back-gate Bias and Body-tie on the DSOI SRAMs under Total Ionizing Dose Irradiation
Hongyu Ren,Fanyu Liu,Bo Li,Junyan Zhu,Siyuan Chen,Linfei Wang,Shanshan Ma,Gang Zhang,Jiangjiang Li,Pengyu Cui,Jiantou Gao,Dinghan Ye,Haibin Wang,Jing Wan,Zhengsheng Han,Tianchun Ye
DOI: https://doi.org/10.1109/tns.2024.3371454
IF: 1.703
2024-01-01
IEEE Transactions on Nuclear Science
Abstract:The total ionizing mymargin dose mymargin (TID) effect is systematically investigated in the double silicon-on-insulator (DSOI) static random access memory (SRAM) circuits, taking into consideration: silicon film thicknesses, floating/unfloating body, and back-gate bias. It is experimentally demonstrated that the SRAM circuits with thinner silicon layer (45 nm) and floating-body transistors exhibit better radiation tolerance, with a corresponding decrease in read current by 3.8% and an increase in access time by 34.7%. This can be attributed to enhanced back-gate tuning ability, which increased from 2.17% to 8.62% for nMOS and from 8.6% to 34.7% for pMOS. A back-gate bias of -3 V is sufficient to compensate for the degradation with total dose accumulated up to 1 Mrad(Si). Technology computer-aided design (TCAD) simulations indicate that the electric field gradually saturates near the first buried oxide (BOX) for a thicker silicon layer, weakening the modulation ability of back-gate bias. Compared with floating devices, the tuning range is reduced for devices with body-tie (unfloating body), and higher back-gate voltages can significantly strengthen the electric field in the channel, around three times. This results in a substantial increase in the channel current, implying that the back-gate bias cannot be increased unrestrictedly.