Abstract:An obvious increase in SS and PBS/NBS ΔVth is observed for IGZO thin‐film transistors soaked in deionized water. It's because IGZO surface experiences selective etching of Ga and Zn located next to oxygen vacancy. This clues the challenge in the sensor devices and suggests the necessity of personalized design aimed to different applications based on oxide semiconductors. At present, amorphous indium–gallium–zinc oxide (IGZO) semiconductor has become the most commonly used semiconductor material and is widely used in flat panel displays and various sensors, but its performance is greatly affected by environmental factors, especially water. This study investigates the instability of IGZO thin‐film transistors (TFTs) soaked in deionized water. After 24 h bathing, the field‐effect mobility and threshold voltage change a little, but the subthreshold swing, positive bias stress and negative bias stress stability undergo clear degradation. Through comprehensive examination of the changes in the chemical composition, surface morphology and thickness of the IGZO films, it's found that IGZO experiences selective etching by deionized water, and consequently the film surface becomes rough and rich of In and oxygen vacancies, which can explain the variations on device performance well. In addition to the bathing experiment performed on In2O3, Ga2O3, and ZnO TFTs, a schematic image of the reaction between water and IGZO is depicted, showing the preferential loss of Ga and Zn located next to the oxygen vacancy.

Indium-Zinc-Oxide Electric-Double-Layer Thin-Film Transistors for Humidity Sensing

Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters

Low-voltage electric-double-layer TFTs on SiO2-covered paper substrates

Flexible electric-double-layer thin film transistors based on a vertical InGaZnO 4 channel

Branched Polyethylenimine-Based Field Effect Transistor for Low Humidity Detection at Room Temperature

On the Capacitive-to-Resistive Humidity Response of Polyelectrolyte-Gated Metal Oxide Transistors

Low-Voltage Transparent Indium–Zinc–Oxide Coplanar Homojunction TFTs Self-Assembled on Inorganic Proton Conductors

Low-voltage Transparent Electric-Double-layer ZnO-based Thin-Film Transistors for Portable Transparent Electronics

Low-Voltage Oxide-Based Electric-Double-Layer TFTs Gated by Stacked $\hbox{sio}_{2}$ Electrolyte/Chitosan Hybrid Dielectrics

Low-Voltage Electric-Double-Layer TFTs on $ \hbox{SiO}_{2}$ -Covered Paper Substrates

Flexible IZO Homojunction TFTs with Graphene Oxide/Chitosan Composite Gate Dielectrics on Paper Substrates

Ion Gel Coated Graphene Field Effect Transistor for Humidity Sensing Applications

A High-Performance Humidity Sensor Based on In-Pcb Interdigitated Electrodes

Ultralow-Thermal-Budget-Driven IWO-Based Thin-Film Transistors and Application Explorations

Flexible Indium‐Tin‐Oxide Homojunction Thin‐Film Transistors with Two In‐Plane Gates on Cellulose‐Nanofiber‐Soaked Papers

Enlightenment of Deionized‐Water Bathing IGZO TFTs

Transparent Flexible IGZO Thin Film Transistors Fabricated at Room Temperature

Characteristics of Elevated-Metal Metal-Oxide Thin-Film Transistors Based on Indium-Tin-Zinc Oxide

Extended-gate-type IGZO electric-double-layer TFT immunosensor with high sensitivity and low operation voltage

High Reliability Of Igzo Tfts Using Low-Temperature Fabricated Organic Passivation Layers

Amorphous indium zinc oxide thin film transistors with poly-4-vinylphenol gate dielectric layers