Abstract:The low-dose neutron irradiation defect evolution and nanoindentation response of indium (In)-doped gallium nitride (GaN) materials are investigated in this work, which is of great significance for improving the reliability and safety of nitride semiconductors in neutron irradiation environments, as well as for clarifying their mechanical properties. A numerical simulation approach based on molecular dynamics (MD) is utilized to construct wurtzite GaN models comprising Indium doping concentrations up to 2%. Nanoindentation simulations are performed to analyze the elastoplastic deformation mechanisms of the c-plane and m-plane In-doped GaN materials. The low-dose neutron irradiation process of In-doped GaN is further simulated, and its structural changes and defects evolution are analyzed. The indentation hardness of the c-plane GaN decreases and its Young’s modulus increases as the doping concentration increases. Increases in both the indentation hardness and Young’s modulus are seen for the m-plane GaN with the increasing doping concentration. Moreover, the doping of indium suppresses the plastic deformation both in the c-plane and m-plane GaNs. Two types of prismatic loops formation mechanisms are unraveled, i.e. the “nested shear loops pinch-off” mechanism in the m-plane perfect GaN, and the “lasso-shape shear loop pinch-off” mechanism in the m-plane In-doped GaN. When subject to low-dose neutron irradiation, In-doped GaN materials exhibit higher resistance to the generation of irradiation defects. As the doping concentration increases, the amounts of phase transformation, Frenkel pairs, and amorphization decrease.

Calculations of Defect States in Various Sizes of InN Nanowires.

First-Principles Study on Native Defect Complexes in InN

Synthesis, optical and transport properties of single-crystal N-deficient InN nanowires

Optoelectronic properties exploration of native point defects on GaN nanowires

Defects In Gallium Nitride Nanowires: First Principles Calculations

Native defects and impurities in InN: First-principles studies using the local-density approximation and self-interaction and relaxation-corrected pseudopotentials

Stability and electronic structure of single-walled InN nanotubes

A Density Functional Theory Study of Selfassembled (InN)12n (n=1-9) Nanowires and Nanosheets: Implications for CO2 Capture and Optoelectronic Applications

Exploration on Electronic Properties of Self-Assembled Indium Nitrogen Nanosheets and Nanowires by a Density Functional Method

Effects of N Implantation on Defect Formation in ZnO Nanowires

Native Defects in InxGa1−xN Alloys

Atomic-Scale Characterization of Extended Defects in Wurtzite GaN Heterostructures

Light Emission Induced by the Indium Distribution in InGaN Nanowires

Band Edge Modulation and Light Emission in Ingan Nanowires Due to the Surface State and Microscopic Indium Distribution

Characteristics and Fabrications of InN Nanowire Material

Nanoscale Optical Properties of Indium Gallium Nitride/Gallium Nitride Nanodisk-In-Rod Heterostructures

Defect Evolution Induced by Low-Dose Neutron Irradiation and Elastoplastic Deformation Mechanism of Indium-Doped GaN Materials

Atomic geometry and electronic structure of defects in Zn3N2

Effect of Native Defects on Optical Properties of InxGa1-xN Alloys

Using neural network potential to study point defect properties in multiple charge states of GaN with nitrogen vacancy

Photoluminescence Properties of a Nearly Intrinsic Single InN Nanowire