Abstract:In this paper, we present an effective synthetic protocol to produce high quality InN nanocrystals using indium iodide (InI3), one member of the family of indium halides, as the indium source at a low temperature of <250 degrees C (far below the decomposition temperature of InN). Notably, reports on InN synthesized from indium halides are rare due to the lack of well-defined synthetic protocols. Here, indium iodide (InI3), with a stronger covalent ability, can also prevent the In3+ from being reduced to elemental indium, and then InN is formed. This synthetic protocol not only provides an alternative method to successfully synthesize high-quality InN, but is also useful to fabricate other functional materials by using stronger covalent reactants to prevent reduction/oxidation in the oxidation/reduction reaction process, respectively. Furthermore, we also report the first example of an orientation-attachment process occurring between the metal nitride particles. The high purity of the InN nanoparticles can be seen from the XPS and HRTEM results, showing the as-obtained products possess no obvious iodine or amorphous layers on the surface of particles, respectively. By controlling the parameters of reaction temperature and time, nanoparticles with different sizes were obtained as the final products. Raman and IR results indicate that our experimental data were consistent with the theoretical prediction and this gives further evidence that high quality InN nanocrystals were obtained. Moreover, it has been shown that the near-infrared band around 0.7 eV is characteristic of these samples and there were no obvious peaks around 1.9 eV, indicating that these InN nanocrystals exhibit a band gap of 0.7 eV, rather than the previously accepted 1.9 eV.

Synthesis, optical and transport properties of single-crystal N-deficient InN nanowires

Synthesis and Characterization of Single-Crystal Indium Nitride Nanowires

Calculations of Defect States in Various Sizes of InN Nanowires.

Photoluminescence Properties of a Nearly Intrinsic Single InN Nanowire

The Electronic Structures of AlN and InN Wurtzite Nanowires

Low Pressure Chemical Vapor Deposition Synthesis of InN Nanowires and Their Field Electron Emission

Synthesis, Microstructure, Growth Mechanism and Photoluminescence of High Quality [0001]-Oriented Inn Nanowires and Nanonecklaces

Controlled Growth and Characterization of Non-tapered InN Nanowires on Si(111) Substrates by Molecular Beam Epitaxy

Characteristics and Fabrications of InN Nanowire Material

Synthesis of [100] Wurtzite InN Nanowires and [011] Zinc-Blende InN Nanorods

Observation of Phonon Sideband Emission in Intrinsic InN Nanowires: a Photoluminescence and Micro-Raman Scattering Study.

Synthesis of Cds Nanowire Networks and Their Optical and Electrical Properties

Experimental observation of ferromagnetism evolution in nanostructured semiconductor InN

Indium nitride from indium iodide at low temperatures: synthesis and their optical properties

On the Crystalline Structure, Stoichiometry and Band Gap of Inn Thin Films

Template-assisted synthesis of ordered single crystal InN nanowires

Synthesis and Optical Property of High Purity Aln Nanowires

Stability and electronic structure of single-walled InN nanotubes

Structural, electrical and optical properties of InxGa1-xN nanowires photocathode

Studies of High Field Transport in a High-Quality InN Film by Ultrafast Raman Spectroscopy

Growth And Morphology Of 0.80 Ev Photoemitting Indium Nitride Nanowires