Abstract:Though intensive experimental studies have been carried out on electron emission properties in past decades, the reliable data from accurate experimental measurements for clean and smooth surfaces are still quite limited. In this work, we have performed a comprehensive Monte Carlo simulation of electron emission yields, the secondary electron yield (SEY, & delta;), backscattered electron coefficient (BSC, & eta;) and total electron yield (TEY, & sigma; = & delta; + & eta;), from silicon and the uncertainty quantification of the theoretical calculation results for the first time. The simulations were made on total 17280 scattering models. The considered uncertainty factors in the physical modelling that can influence the calculated yields include work function data, optical energy loss function data, dielectric function models for electron inelastic scattering and the scattering potentials for electron elastic scattering. The calculation results show that & delta; is significantly influenced by the work function while the dielectric function model has a slight effect. Elastic scattering potential (or elastic scattering cross section) and energy loss function affects to a certain extent both & delta; and & eta;. Our simulated & eta; data agree with most of the experimental measurements while the simulated mean & delta; data are well below most of the experimental data. At a 75% level of confidence, the experimental & sigma; data measured by Goto et al. lie within the uncertainty range of our simulation results. This work has provided sufficient ground for the necessity of building a theoretical database of electron emission yield considering the fact that most of the previous experimental data are not reliable due to the presence of surface contamination during the measurements.

Relationship Between Secondary-Electron Yield and Structure of Polycrystalline Diamond Prepared under Different Methane Concentrations

Research On Secondary Electron Emission Characteristics of Diamond-Like Carbon Thin Films

Secondary electron emission of B-doped/undoped double-layer heteroepitaxial single crystal diamond film

Modeling of the Electron Field Emission Process in Polycrystalline Diamond and Diamond-Like Carbon Thin Films

Study of Secondary Electron Generation and Transport in Diamond

First-Principle Calculation on Inelastic Electron Scattering in Diamond and Graphite

Modelling of the Electron Field Emission Process in Polycrystalline Diamond-Like Carbon Thin Films

Effect of Hydrogen Plasma Treatment on Secondary Electron Emission Properties of Polycrystalline Diamond Films

Effect of amorphous carbon film on secondary electron emission from metal

The Structural Evolution Of Nanocrystalline Diamond Films Synthesized By R.F. Pecvd

The Intrinsic Relation Between Field Electron Emission and Structure Characteristics of Amorphous Diamond Film

An extensive theoretical quantification of secondary electron emission from silicon

Study of Field Electron Emission from Nanocrystalline Diamond Thin Films Grown from A N-2/Ch4 Microwave Plasma

Effect of CH4 concentration on the early growth stage of patterned diamond using high seeding density and hot filament chemical vapor deposition

Diagnostics of Plasma Emission Spectra During Electron Assisted Chemical Vapor Deposition of Diamond Films

Study of Secondary Electron Emission from Semiconductors Induced by Electrons from 20 Ev to 800 Ev and Surface State of Semiconductors

Evolution of High-Quality Homoepitaxial CVD Diamond Films Induced by Methane Concentration

Microstructural Modification of Diamond-Graphite Nanohybrid Films Via Adjusting Deposition Temperatures for Enhanced Electron Field Emission

A Study of Field Electron Emission Phenomenon Associated with Amorphous Diamond Thin Films

Monte Carlo Simulation of Electron Velocity Distribution and Gas Phase Process in Electron-Assisted Chemical Vapor Deposition

Secondary electron emission characteristics of C(111) and the observation of double-peaked emission spectra