Direct Observation of Dual-Filament Switching Behaviors in Ta 2 O 5 -Based Memristors.

Chia-Fu Chang,Jui-Yuan Chen,Chun-Wei Huang,Chung-Hua Chiu,Ting-Yi Lin,Ping-Hung Yeh,Wen-Wei Wu
DOI: https://doi.org/10.1002/smll.201603116
IF: 13.3
2017-01-01
Small
Abstract:The Forming phenomenon is observed via in situ transmission electron microscopy in the Ag/Ta O /Pt system. The device is switched to a low-resistance state as the dual filament is connected to the electrodes. The results of energy dispersive spectrometer and electron energy loss spectroscopy analyses demonstrate that the filament is composed by a stack of oxygen vacancies and Ag metal.
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