Abstract:The complex conductive behavior of ferroelectric domain walls is attracting more and more attention for their potential application as an independent nanoelectronic component. For the (001) epitaxial BiFeO3 films, we find that the domain wall conductivity varies among 71° domain walls, with tail-to-tail (T-T) domain walls more conductive than head-to-head (H-H) and head-to-tail (H-T) ones. Furthermore, it is observed that most of the conductive areas are composed of two parallel lines around the T-T domain walls. These experimental results can be well simulated by our theoretical model based on the polarization configuration and a tunneling mechanism. Our work will help to understand the mechanism of domain wall conductance in ferroelectric materials and further promote the usage of domain walls in advanced nano-devices.The complex conductive behavior of ferroelectric domain walls is attracting more and more attention for their potential application as an independent nanoelectronic component. For the (001) epitaxial BiFeO3 films, we find that the domain wall conductivity varies among 71° domain walls, with tail-to-tail (T-T) domain walls more conductive than head-to-head (H-H) and head-to-tail (H-T) ones. Furthermore, it is observed that most of the conductive areas are composed of two parallel lines around the T-T domain walls. These experimental results can be well simulated by our theoretical model based on the polarization configuration and a tunneling mechanism. Our work will help to understand the mechanism of domain wall conductance in ferroelectric materials and further promote the usage of domain walls in advanced nano-devices.

Controllable Conductive Readout in Self-Assembled, Topologically Confined Ferroelectric Domain Walls

In-plane Charged Domain Walls with Memristive Behaviour in a Ferroelectric Film

Controlled manipulation of conductive ferroelectric domain walls and nanoscale domains in BiFeO3 thin films

Manipulation of Conductive Domain Walls in Confined Ferroelectric Nano-islands

Unusual Domain Evolution in Semiconducting Ferroelectrics: A Phase Field Study

Conductive Tail-to-tail Domain Walls in Epitaxial BiFeO3 Films

Ferroelectric Domain-Wall Logic Units

Electric Field Control of Multiferroic Domain Wall Motion

Electric Field Writing of Ferroelectric Nano‐Domains Near 71° Domain Walls with Switchable Interfacial Conductivity

Topologically Protected Ferroelectric Domain Wall Memory with Large Readout Current

Conduction control at ferroic domain walls via external stimuli.

Curvature Conservation and Conduction Modulation for Symmetric Charged Ferroelectric Domain Walls

Temporary Formation of Highly Conducting Domain Walls for Non-Destructive Read-out of Ferroelectric Domain-Wall Resistance Switching Memories.

Field Enhancement of Electronic Conductance at Ferroelectric Domain Walls

Atomic-scale observations of electrical and mechanical manipulation of topological polar flux closure

In-Plane Ferroelectric Domain Wall Memory with Embedded Electrodes on LiNbO3 Thin Films.

Giant Domain Wall Conductivity in Self‐Assembled BiFeO 3 Nanocrystals

Ultrathin Non‐Ising Charged Domain Walls Confined in BiFeO3 Nanocrystals

Microwave A.c. Conductivity of Domain Walls in Ferroelectric Thin Films.

Conduction at domain walls in oxide multiferroics

Dynamic Conductivity of Ferroelectric Domain Walls in Bifeo3