Abstract:Bi2Te3-based materials are dominating thermoelectrics for almost all of the room-temperature applications. To meet the future demands, both their thermoelectric (TE) and mechanical properties need to be further improved, which are the requisite for efficient TE modules applied in areas such as reliable micro-cooling. The conventional zone melting (ZM) and powder metallurgy (PM) methods fall short in preparing Bi2Te3-based alloys, which have both a highly textured structure for high TE properties and a fine-grained microstructure for high mechanical properties. Herein, a mechanical exfoliation combined with spark plasma sintering (ME-SPS) method is developed to prepare Bi0.5Sb1.5Te3 with highly improved mechanical properties (correlated mainly to the dislocation networks), as well as significantly improved thermoelectric properties (correlated mainly to the texture structure). In the method, both the dislocation density and the orientation factor (F) can be tuned by the sintering pressure. At a sintering pressure of 20 MPa, an exceptional F of up to 0.8 is retained, leading to an excellent power factor of 4.8 mW m-1 K-2 that is much higher than that of the PM polycrystalline. Meanwhile, the method can readily induce high-density dislocations (up to ∼1010 cm-2), improving the mechanical properties and reducing the lattice thermal conductivity as compared to the ZM ingot. In the exfoliated and then sintered (20 MPa) sample, the figure-of-merit ZT = 1.2 (at 350 K), which has increased by about ∼20%, and the compressive strength has also increased by ∼20%, compared to those of the ZM ingot, respectively. These results demonstrate that the ME-SPS method is highly effective in preparing high-performance Bi2Te3-based alloys, which are critical for TE modules in commercial applications at near-room temperature.

Fabrication of Highly (0 0 )-Textured SbTe Film and Corresponding Thermoelectric Device with Enhanced Performance

Synergistic Texturing and Bi/Sb‐Te Antisite Doping Secure High Thermoelectric Performance in Bi 0.5 Sb 1.5 Te 3 ‐Based Thin Films

High thermoelectric performance achieved in Bi0.4Sb1.6Te3 films with high (00l) orientation via magnetron sputtering

Direct Melt-Calendaring of Highly Textured (Bi,Sb)2Te3 Thick Films: Superior Thermoelectric and Mechanical Performance via Strain Engineering

Structurally nanocrystalline electrically monocrystalline Sb2Te3 with high thermoelectric performance

Enhancement of ZT in Bi0.5Sb1.5Te3 Thin Film through Lattice Orientation Management

Optimizing the thermoelectric properties of flexible Bi[math]Sb[math]Te[math] thin films via modulating magnetron sputtering power

Characterization of Magnetron Sputtered BiTe-Based Thermoelectric Thin Films

Achieving High Thermoelectric Performance in Bi2(Te, Se)3 Thin Film with (00 l)-Oriented by Incorporating Tellurization and Selenization Processes

High-performance Sb2Si2Te6 thermoelectric device

Carrier concentration and orientation optimization for high performance (Sb,Bi) 2 Te 3 thermoelectric films via magnetron co-sputtering

High Thermoelectric Performance of Non‐Stoichiometric and Oriented GeTe Thin Films

Decoupling opposed thermoelectric properties

Enhancing thermoelectric properties of AgSbTe 2 thin films by modulating vacancies and microstructures

Directional Thermal Diffusion Realizing Inorganic Sb2Te3/Te Hybrid Thin Films with High Thermoelectric Performance and Flexibility

Enhancing thermoelectric properties of AgSbTe2 thin films by modulating vacancies and microstructures

Enhancing the Thermoelectric and Mechanical Properties of Bi 0.5 Sb 1.5 Te 3 Modulated by the Texture and Dense Dislocation Networks

Thermoelectric performance of p-type (Bi,Sb)2Te3 incorporating amorphous Sb2S3 nanospheres

In situ crystal-amorphous compositing inducing ultrahigh thermoelectric performance of p-type Bi0.5Sb1.5Te3 hybrid thin films

Remarkable average thermoelectric performance of the highly oriented Bi(Te, Se)-based thin films and devices

Controlling the shape of hexagonal structure by growth condition improves the thermoelectric properties of p-type Bi-Te films