Evolution of atomic structure and electronic transport properties in n-type Bi 2 Te 3 films via Bi 2 planar defects
Min Zhang,Wei Liu,Cheng Zhang,Sen Xie,Fuqiang Hua,Fan Yan,Rui Cheng,Jiangfan Luo,Wei Wang,Hao Sang,Haoran Ge,Zhaohui Wang,Qirui Tao,Hui Bai,Hao Luo,Jinsong Wu,Xinfeng Tang
DOI: https://doi.org/10.1063/5.0045518
IF: 4
2021-03-08
Applied Physics Letters
Abstract:Bi<sub>2</sub>Te<sub>3</sub> films always exhibit n-type transport characteristics even under the Bi-rich condition, which, however, was not clarified clearly. Herein, by virtue of advanced techniques such as scanning tunneling microscopy, angle-resolved photoelectron spectroscopy, scanning transmission electron microscopy, and x-ray photoelectron spectroscopy, we are able to identify the structural evolution on the atomic scale for Bi-rich Bi<sub>2</sub>Te<sub>3</sub> films. The excess of Bi content will lead to the formation of p-type Bi<sub>Te</sub> antisite defects; however, there is a doping limit for the excess of Bi to form Bi<sub>Te</sub> antisites. Beyond this limit, the excess of Bi will form the n-type Bi<sub>2</sub> planar defects in the van der Waals gap, the excellent electron donors, which can enhance the electron density by over one order of magnitude and up to the 10<sup>21</sup> cm<sup>−3</sup> range for Bi-rich Bi<sub>2</sub>Te<sub>3</sub> films. Benefiting from the remarkable increase in the electron density and the suppression of carrier intrinsic excitations, Bi<sub>2</sub>Te<sub>3</sub> films with Bi<sub>2</sub> planar defects possess a much improved thermoelectric power factor, with a maximum value of 1.4 mW m<sup>−1</sup> K<sup>−2</sup> at 450 K, showing about 130% enhancement compared to that of the film without Bi<sub>2</sub> intercalations. The discovery opens a new avenue to improve the thermoelectric properties of Bi<sub>2</sub>Te<sub>3</sub> films utilizing the Bi<sub>2</sub> planar defects.
physics, applied