Ultrahigh Power Factor of Sputtered Nanocrystalline N-Type Bi2Te3 Thin Film via Vacancy Defect Modulation and Ti Additives

Tingrui Gong,Lei Gao,Lingfeng Kang,Maolin Shi,Gu Hou,Shenghui Zhang,Dechao Meng,Juntao Li,Wei Su

DOI: https://doi.org/10.1002/advs.202403845

2024-08-09

Abstract:Magnetron-sputtered thermoelectric thin films have the potential for reproducibility and scalability. However, lattice mismatch during sputtering can lead to increased defects in the epitaxial layer, which poses a significant challenge to improving their thermoelectric performance. In this work, nanocrystalline n-type Bi2Te3 thin films with an average grain size of ≈110 nm are prepared using high-temperature sputtering and post-annealing. Herein, it is demonstrated that high-temperature treatment exacerbates Te evaporation, creating Te vacancies and electron-like effects. Annealing improves crystallinity, increases grain size, and reduces defects, which significantly increases carrier mobility. Furthermore, the pre-deposited Ti additives are ionized at high temperatures and partially diffused into Bi2Te3, resulting in a Ti doping effect that increases the carrier concentration. Overall, the 1 µm thick n-type Bi2Te3 thin film exhibits a room temperature resistivity as low as 3.56 × 10-6 Ω∙m. Notably, a 5 µm thick Bi2Te3 thin film achieves a record power factor of 6.66 mW mK-2 at room temperature, which is the highest value reported to date for n-type Bi2Te3 thin films using magnetron sputtering. This work demonstrates the potential for large-scale of high-quality Bi2Te3-based thin films and devices for room-temperature TE applications.