Abstract:Modulation of the microstructure and configurational entropy tuning are the core stratagem for improving thermoelectric performance. However, the correlation of evolution among the preparation methods, chemical composition, structural defects, configurational entropy, and thermoelectric properties is still unclear. Herein, two series of AgSbTe2-based compounds were synthesized by an equilibrium melting-slow-cooling method and a nonequilibrium melting-quenching-spark plasma sintering (SPS) method, respectively. The equilibrium method results in coarse grains with a size of >300 μm in the samples and a lower defect concentration, leading to higher carrier mobility of 10.66 cm2 V-1 s-1 for (Ag2Te)0.41(Sb2Te3)0.59 compared to the sample synthesized by nonequilibrium preparation of 1.83 cm2 V-1 s-1. Moreover, tuning the chemical composition of nonstoichiometric AgSbTe2 effectively improves the configurational entropy and creates a large number of cation vacancies, which evolve into dense dislocations in the samples. Owing to all of these in conjunction with the strong inharmonic vibration of lattice, an ultralow thermal conductivity of 0.51 W m-1 K-1 at room temperature is achieved for the (Ag2Te)0.42(Sb2Te3)0.58 sample synthesized by the equilibrium preparation method. Due to the enhanced carrier mobility, optimized carrier concentration, and low thermal conductivity, the (Ag2Te)0.42(Sb2Te3)0.58 sample synthesized by the equilibrium preparation method possesses the highest ZT of 1.04 at 500 K, more than 60% higher than 0.64 at 500 K of the same composition synthesized by nonequilibrium preparation.

Enhancing thermoelectric properties of AgSbTe 2 thin films by modulating vacancies and microstructures

Enhancing thermoelectric properties of AgSbTe2 thin films by modulating vacancies and microstructures

Enhancement on thermoelectric performance by Ti doping and vacancies

Enhancing Thermoelectric Performance of AgSbTe 2 -Based Compounds via Microstructure Modulation Combining with Entropy Engineering

High-Density Arrangement of Nanoscale Regions with Tellurium Interstitial Atoms and Silver/Copper Vacancies in AgCuTe Thermoelectric Materials

Significantly improved thermoelectric performance of Ag-doped Bi0.5Sb1.5Te3 films deriving from high-efficient carrier filtering effect

Advancing thermoelectrics by vacancy engineering and band manipulation in Sb-doped SnTe–CdTe alloys

Band convergence and nanostructure modulations lead to high thermoelectric performance in SnPb0.04Te-y% AgSbTe2

Tuning thermoelectric properties of Sb$_2$Te$_3$-AgSbTe$_2$ nanocomposite thin film -- synergy of band engineering and heat transport modulation

Suppressing Ag2Te Nanoprecipitates for Enhancing Thermoelectric Efficiency of AgSbTe2

Synergistic modulation of mobility and thermal conductivity in (Bi,Sb)2Te3 towards high thermoelectric performance

Carrier concentration and orientation optimization for high performance (Sb,Bi) 2 Te 3 thermoelectric films via magnetron co-sputtering

Tailoring Nanoporous Structures in Bi2Te3 Thin Films for Improved Thermoelectric Performance

Improved Thermoelectric Properties of AgSbTe2 Based Compounds with Nanoscale Ag2Te in Situ Precipitates

Outstanding thermoelectric properties of solvothermal-synthesized Sn<sub>1-3<i>x</i></sub>In<sub><i>x</i></sub>Ag<sub>2<i>x</i></sub>Te micro-crystals through defect engineering and band tuning

Synergistic Texturing and Bi/Sb‐Te Antisite Doping Secure High Thermoelectric Performance in Bi 0.5 Sb 1.5 Te 3 ‐Based Thin Films

Substantial thermoelectric enhancement achieved by manipulating the band structure and dislocations in Ag and La co-doped SnTe

Defect Engineering Stabilized AgSbTe2 with High Thermoelectric Performance

Enhancement of ZT in Bi0.5Sb1.5Te3 Thin Film through Lattice Orientation Management

Band and Vacancy Engineering in SnTe to Improve its Thermoelectric Performance

Optimized Thermoelectric Properties of Bi0.48Sb1.52Te3 Through AgCuTe Doping for Low-Grade Heat Harvesting.