Fabrication of Nickel and Nickel Carbide Thin Films by Pulsed Chemical Vapor Deposition

Guo Qun,Guo Zheng,Shi Jianmin,Sang Lijun,Gao Bo,Chen Qiang,Wang Xinwei,Liu Zhongwei
DOI: https://doi.org/10.1557/mrc.2018.21
2018-01-01
MRS Communications
Abstract:We report a new pulsed chemical vapor deposition (PCVD) process to deposit nickel (Ni) and nickel carbide (Ni3Cx) thin films, using bis(1,4-ditert- butyl-1,3-diazabutadienyl)nickel(II) precursor and either H 2 gas or H 2 plasma as the coreactant, at a temperature from 140 to 250 °C. All the PCVD films are fairly pure with low levels of N and O impurities. The films deposited with H 2 gas at ≤200 °C are faced centered cubic-phase Ni metal films with low C content; but at ≥220 °C, another phase of rhombohedral Ni 3 C is formed and the C content increases. However, when H 2 plasma is used, the films are always in rhombohedral Ni3C phase for the entire temperature range.
What problem does this paper attempt to address?