Abstract:Amorphous oxide semiconductors, especially indium gallium zinc oxide (IGZO), have been widely studied and obtained significant progress in flexible thin-film transistors (TFTs) due to the high carrier mobility and low deposition temperature. However, a further annealing step is generally required to activate electrical properties and improve the device performance, which limited their applications in flexible electronics. In this study, we achieved flexible TFTs and arrays using co-sputtered IGZO and indium tin oxide (ITO) as channels deposited at room temperature without post-annealing. It was found that better transistor switching properties could be effectively achieved by regulating the sputtering power of ITO in the co-sputtered deposition. The device performance is comparable to that of the conventional oxide TFTs with high annealing temperatures (≥300 °C), exhibiting a high saturation mobility (μsat) of 15.3 cm 2 V -1 s -1 , a small subthreshold swing (SS) of 0.21 V dec -1 , and a very high on-off ratio (Ion/off) of 10 11 . In addition, a 12 × 12 flexible TFT array was achieved with uniform performance owing to the low-temperature processing advantage of this technique. The flexible TFTs exhibited robust mechanical flexibility with a minimum bending radius of 5 mm and bending cycles up to 1000. Furthermore, an inverter based on co-sputtered IGZO and ITO was demonstrated with the maximum gain of 22. All these achievements based on the proposed TFTs without post-annealing process are expected to promote the applications in advanced flexible displays and large-area integrated circuits.

Low-Temperature and Solution-Processed Indium Tin Oxide Films and Their Applications in Flexible Transparent Capacitive Pressure Sensors

Transparent electric conductive films for optoelectronic devices

Low-Temperature Fabrication of IZO Thin Film for Flexible Transistors

Effect of Different Thermo-Treatment at Relatively Low Temperatures on the Properties of Indium‑tin-Oxide Thin Films

Lightwave Irradiation-Assisted Low-Temperature Solution Synthesis of Indium-Tin-oxide Transparent Conductive Films

Piezoresistive Pressure Sensors with Composite Film of Indium Tin Oxide Nanocrystals Dispersed in Poly(vinyl Alcohol)

Low Resistivity ITO Thin Films Deposited by NCD Technique at Low Temperature: Variation of Tin Concentration

A study of indium tin oxide thin film deposited at low temperature using facing target sputtering system

Research on Pattern-Induced Transparent Conductive Films

Flexible Transparent Junctionless TFTs with Oxygen-Tuned Indium-Zinc-Oxide Channels

Low Reflectivity and High Flexibility of Tin-Doped Indium Oxide Nanofiber Transparent Electrodes.

Indium Tin Oxide Films Deposited on Plastic Substrate at Low Temperature

A Novel Strategy of Fabricated Flexible ITO Electrode by Liquid Metal Ultra-Thin Oxide Film

PDMS-Based Capacitive Pressure Sensor for Flexible Transparent Electronics

Development of Low Temperature Amorphous Tin-Doped Indium Oxide Thin-Film Transistors Technology

Fabrication of a completely transparent and highly flexible ITO nanoparticle electrode at room temperature

High-performance ITO thin films for on-cell touch sensor of foldable OLED displays

Room-temperature fabrication of flexible oxide TFTs by co-sputtering of IGZO and ITO

A Flexible Temperature Sensor Array with Polyaniline/Graphene–Polyvinyl Butyral Thin Film

Optical and electrical properties of ITO film on flexible fluorphlogopite substrate

Low-temperature fabrication of high performance indium oxide thin film transistors