Phosphorus Doping In Si Nanocrystals/Sio2 Multilayers And Light Emission With Wavelength Compatible For Optical Telecommunication (Vol 6, 22888, 2016)

Peng Lu,Weiwei Mu,Jun Xu,Xiaowei Zhang,Wenping Zhang,Wei Li,Ling Xu,Kunji Chen

DOI: https://doi.org/10.1038/srep33767

IF: 4.6

2016-01-01

Scientific Reports

Abstract:A Nature Research Journal

What problem does this paper attempt to address?

Phosphorus Doping in Si Nanocrystals/SiO2 Multilayers and Light Emission with Wavelength Compatible for Optical Telecommunication.

Peng Lu,Weiwei Mu,Jun Xu,Xiaowei Zhang,Wenping Zhang,Wei Li,Ling Xu,Kunji Chen

DOI: https://doi.org/10.1038/srep22888

IF: 4.6

2016-01-01

Scientific Reports

Abstract:Doping in semiconductors is a fundamental issue for developing high performance devices. However, the doping behavior in Si nanocrystals (Si NCs) has not been fully understood so far. In the present work, P-doped Si NCs/SiO 2 multilayers are fabricated. As revealed by XPS and ESR measurements, P dopants will preferentially passivate the surface states of Si NCs. Meanwhile, low temperature ESR spectra indicate that some P dopants are incorporated into Si NCs substitutionally and the incorporated P impurities increase with the P doping concentration or annealing temperature increasing. Furthermore, a kind of defect states will be generated with high doping concentration or annealing temperature due to the damage of Si crystalline lattice. More interestingly, the incorporated P dopants can generate deep levels in the ultra-small sized (~2 nm) Si NCs, which will cause a new subband light emission with the wavelength compatible with the requirement of the optical telecommunication. The studies of P-doped Si NCs/SiO 2 multilayers suggest that P doping plays an important role in the electronic structures and optoelectronic characteristics of Si NCs.
Enhanced Subband Light Emission from Si Quantum Dots/sio2 Multilayers Via Phosphorus and Boron Co-Doping

Dongke Li,Jiaming Chen,Teng Sun,Yangyi Zhang,Jun Xu,Wei Li,Kunji Chen

DOI: https://doi.org/10.1364/oe.453086

IF: 3.8

2022-01-01

Optics Express

Abstract:Seeking light sources from Si-based materials with an emission wavelength meeting the requirements of optical telecommunication is a challenge nowadays. It was found that the subband emission centered near 1200 nm can be achieved in phosphorus-doped Si quantum dots/SiO2 multilayers. In this work, we propose the phosphorus/boron co-doping in Si quantum dots/SiO2 multilayers to enhance the subband light emission. By increasing the B co-doping ratio, the emission intensity is first increased and then decreased, while the strongest integrated emission intensity is almost two orders of magnitude stronger than that of P solely-doped sample. The enhanced subband light emission in co-doped samples can be attributed to the passivation of surface dangling bonds by B dopants. At high B co-doping ratios, the samples transfer to p-type and the subband light emission from phosphorus-related deep level is suppressed but the emission centered around 1400 nm is appeared.
Electroluminescence from Si Nanocrystal/c-Si Heterojunction Light-Emitting Diodes

Dawei Di,Ivan Perez-Wurfl,Lingfeng Wu,Yidan Huang,Alessandro Marconi,Andrea Tengattini,Aleksei Anopchenko,Lorenzo Pavesi,Gavin Conibeer

DOI: https://doi.org/10.1063/1.3671671

IF: 4

2011-01-01

Applied Physics Letters

Abstract:Silicon nanocrystals have shown attractive properties for photonic and photovoltaic applications. We demonstrate all-Si light-emitting diodes based on boron-doped Si nanocrystal/c-Si p-n heterojunction structure, which show electroluminescence in the visible/infrared regions. The electroluminescence spectra of these diodes can be modified by changing the quantum confining barriers from SiO2 to Si3N4. Our results are an important demonstration of electroluminescence from boron-doped Si nanocrystals—a wide band gap absorber material for third generation photovoltaics.
Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation

Ye Lei,Deren Yang,Dongsheng Li

DOI: https://doi.org/10.3390/ma16031079

IF: 3.4

2023-01-01

Materials

Abstract:In this paper, we use the spin-on-dopant technique for phosphorus doping to improve the photoelectric properties of soft-chemical-prepared silicon nanosheets. It was found that the luminescence intensity and luminescence lifetime of the doped samples was approximately 4 fold that of the undoped samples, due to passivation of the surface defects by phosphorus doping. Meanwhile, phosphorus doping combined with high-temperature heat treatment can reduce the resistivity of multilayer silicon nanosheets by 6 fold compared with that of as-prepared samples. In conclusion, our work brings soft-chemical-prepared silicon nanosheets one step closer to practical application in the field of optoelectronics.
Time-resolved and temperature-dependent photoluminescence study on phosphorus doped Si quantum dots/SiO 2 multilayers with ultra-small dot sizes

Peng Lu,Dongke Li,Pei Zhang,Dameng Tan,Weiwei Mu,Jun Xu,Wei Li,Kunji Chen

DOI: https://doi.org/10.1364/OME.6.003233

2016-01-01

Optical Materials Express

Abstract:Light emission from Si quantum dots has been extensively studied but the emission wavelength is usually in the visible range, which is not compatible with the requirements of today's optical telecommunications. Recently, the light emission in the near-infrared range from impurity-doped Si quantum dots were reported but the light emitting mechanism is still an open question. Here we systematically study the phosphorus doping induced sub-band light emission centered at 1250nm in addition to the conventionally observed 890nm emission band in Si quantum dots/SiO2 multilayers with ultra-small dot sizes. It is found that the photoluminescence behaviours of the two independent emission bands are quite different and strongly influenced by the doping concentrations. The time-resolved photoluminescence measurements demonstrate that the 1250nm band has a much shorter lifetime than the 890nm band, which indicates that it has a higher recombination rate to get an efficient emission. Additionally, the temperature dependent photoluminescence measurements are also used to determine the origin of the 1250nm emission. (C) 2016 Optical Society of America
Doping Effect in Si Nanocrystals/SiO2 Multilayers

Dongke Li,Peng Lu,Minqing Qian,Jun Xu,Wei Li,Kunji Chen

DOI: https://doi.org/10.1088/1742-6596/864/1/012012

2017-01-01

Abstract:Doping in Si nano-crystals (Si NCs) is currently a great challenge to develop the high-performance nano-devices. Here, we fabricated P-doped Si NCs by PECVD in Si/SiO2 multilayered structures after annealing at high temperature. It is demonstrated experimentally that P dopants can be incorporated into Si NCs substitutionally. Furthermore, we found that the photoluminescence properties of Si NCs can be drastically modified by P doping in Si NCs/SiO2 multilayers with the ultra-small size. A subband light emission centred at 1200nm is observed, which can be ascribed to the radiative recombination via the P-induced deep level in the gap of the Si NCs. Interestingly, it is also found that the subband emission can be enhanced obviously by B and P co-doping. Our results suggest that doping plays an important role in the electronic structures and optoelectronic characteristics of Si NCs, which provide a new route to realize the Si NCs-based optical and electronical devices.
Phosphorus Doping Effect on Linear and Nonlinear Optical Properties of Si/SiO 2 Multilayers

Pei Zhang,Xiaowei Zhang,Shuo Xu,Peng Lu,Dameng Tan,Jun Xu,Fengqiu Wang,Liying Jiang,Kunji Chen

DOI: https://doi.org/10.1364/ome.7.000304

2017-01-01

Optical Materials Express

Abstract:The linear and nonlinear optical properties of phosphorous-doped Si/SiO2 multilayers as a function of doping concentration were investigated. It was found that the linear optical absorption became weak with the doping concentrations while the corresponding nonlinear optical absorption coefficient was reduced by 4 folds after phosphorus doping. Our experimental results demonstrated that the interface states were passivated by the phosphorus dopants which changed the chemical environment of the Si nanoclusters and in turn affected both the linear and nonlinear optical processes. The excitation-wavelength dependent nonlinear optical behaviors also supported our proposed model. It was suggested that the linear and nonlinear optical properties can be tunable via controlling the phosphorous doping concentrations which provided a new approach to improve the performance of nano-Si-based photonic devices.
Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Dongke Li,Junnan Han,Teng Sun,Jiaming Chen,Etienne Talbot,Remi Demoulin,Wanghua Chen,Xiaodong Pi,Jun Xu,Kunji Chen

DOI: https://doi.org/10.1088/1674-1056/acd7cf

2023-01-01

Chinese Physics B

Abstract:Doping in Si nanocrystals is an interesting topic and directly studying the distribution of dopants in phosphorous/boron co-doping is an important issue facing the scientific community. In this study, atom probe tomography is performed to study the structures and distribution of impurity in phosphorous/boron co-doped Si nanocrystals/SiO2 multilayers. Compared with phosphorous singly doped Si nanocrystals, it is interesting to find that the concentration of phosphorous in co-doped samples can be significantly improved. Theoretical simulation suggests that phosphorous-boron pairs are formed in co-doped Si nanocrystals with the lowest formation energy, which also reduces the formation energy of phosphorous in Si nanocrystals. The results indicate that co-doping can promote the entry of phosphorous impurities into the near-surface and inner sites of Si nanocrystals, which provides an interesting way to regulate the electronic and optical properties of Si nanocrystals such as the observed enhancement of conductivity and sub-band light emission.
Doping silicon nanocrystals with boron and phosphorus

Xiaodong Pi

DOI: https://doi.org/10.1155/2012/912903

IF: 3.791

2012-01-01

Journal of Nanomaterials

Abstract:The properties of silicon nanocrystals (Si NCs) that are usually a few nanometers in size can be exquisitely tuned by boron (B) and phosphorus (P) doping. Recent progress in the simulation of B- and P-doped Si NCs has led to improved explanation for Band P-doping-induced changes in the optical properties of Si NCs. This is mainly enabled by comprehensive investigation on the locations of B and P in Si NCs and the electronic properties of B- and P-doped Si NCs. I remarks on the implications of newly gained insights on B- and P-doped Si NCs. Continuous research to advance the understanding of the doping of Si NCs with B and P is envisioned.
Modulation of Surface States by Phosphorus to Improve the Optical Properties of Ultra-Small Si Nanocrystals

Dongke Li,Yicheng Jiang,Jingjing Liu,Pei Zhang,Jun Xu,Wei Li,Kunji Chen

DOI: https://doi.org/10.1088/1361-6528/aa852e

IF: 3.5

2017-01-01

Nanotechnology

Abstract:Here, we report the enhanced luminescence and optical gain by appropriate P-doping in Si nanocrystals (NCs)/SiO2 multilayers with ultra-small size of similar to 1.9 nm. The luminescence intensity is enhanced by 19.4% compared to that of an un-doped NC and the optical gain is as high as 171.8 cm(-1), which can be attributed to the reduction of surface defect states by the passivation of P impurities as revealed by electron spin resonance spectra. Further increasing the P-doping ratios results in the increase of conduction electrons due to the substitutional doping of phosphorus in the Si NCs, which favors the Auger recombination process. Consequently, both the luminescence intensity and the optical gain decrease rapidly. It is demonstrated that introduction of the suitable impurities can effectively modulate the surface chemical environment of Si NCs, which provides a new way to control the physical properties of Si NCs.
Size-dependent Phosphorus Doping Effect in Nanocrystalline-Si-based Multilayers

Yicheng Jiang,Dongke Li,Jun Xu,Wei Li,Kunji Chen

DOI: https://doi.org/10.1016/j.apsusc.2018.03.055

IF: 6.7

2018-01-01

Applied Surface Science

Abstract:Doping in Si nanocrystalline (Si NCs) is currently an interesting issue since it can modulate electronic structures of Si NCs and consequently affect the electric and optical properties. However, it has been reported that doping in Si NCs is quite difficult due to the self-purification effect and the locations of dopants such as phosphorus (P) and boron (B), as well as the influences of dopants on physical properties is still unclear. In the present work, the P-doped Si NCs/SiO2 multilayers with various dot sizes (2-20 nm) were fabricated. It is found that the electronic properties are enhanced significantly after doping. However, for P-doped samples, the conductivity is size-dependent and reduces with decreasing the dot size, which can be attributed to the reduction of activated carrier concentration in the film with small dot size. Moreover, we find P dopants can induce deep-level for sample with small size of 2 nm, and a sub-band near infrared light emission near 1250 nm is detected. The possible mechanism are discussed briefly. (C) 2018 Elsevier B.V. All rights reserved.
Nonlinear Optical Absorption and Ultrafast Optical Response of Un-Doped and P-doped Nanocrystalline Si/SiO2 Multilayers

P. Zhang,D. K. Li,L. Y. Jiang,J. Xu

DOI: https://doi.org/10.1088/1742-6596/844/1/012012

2017-01-01

Abstract:The nonlinear optical properties and ultrafast optical response of Si/SiO2 multilayers with and without phosphorus doping are comparatively studied in the present work. The enhanced nonlinear absorption and fast recombination process were observed after phosphorus doping, the defect states generated by high phosphorus doping was the possible origination. It was suggested that the nonlinear optical repose as well as the ultrafast dynamic process could be changed greatly via phosphorous doping, which provided a new approach to improve the performance of Si-based photonic devices.
Doped Silicon Nanocrystals From Organic Dopant Precursor By A Sicl4-Based High Frequency Nonthermal Plasma

shu zhou,yi ding,xiaodong pi,tomohiro nozaki

DOI: https://doi.org/10.1063/1.4901278

IF: 4

2014-01-01

Applied Physics Letters

Abstract:Doped silicon nanocrystals (Si NCs) are of great interest in demanding low-cost nanodevices because of the abundance and nontoxicity of Si. Here, we demonstrate a cost-effective gas phase approach to synthesize phosphorous (P)-doped Si NCs in which the precursors used, i.e., SiCl4, trimethyl phosphite (TMP), are both safe and economical. It is found that the TMP-enabled P-doping does not change the crystalline structure of Si NCs. The surface of P-doped Si NCs is terminated by both Cl and H. The Si-H bond density at the surface of P-doped Si NCs is found to be much higher than that of undoped Si NCs. The X-ray photoelectron spectroscopy and electron spin resonance results indicate that P atoms are doped into the substitutional sites of the Si-NC core and electrically active in Si NCs. Unintentional impurities, such as carbon contained in TMP, are not introduced into Si NCs. (C) 2014 AIP Publishing LLC.
Subband Light Emission from Phosphorous-Doped Amorphous Si/Sio2 Multilayers at Room Temperature

Sun Hong-Cheng,Xu Jun,Liu Yu,Mu Wei-Wei,Xu Wei,Li Wei,Chen Kun-Ji

DOI: https://doi.org/10.1088/0256-307x/28/6/067802

2011-01-01

Chinese Physics Letters

Abstract:Phosphorous-doped hydrogenated amorphous Si/SiO2 multilayer structures are fabricated in a plasma enhanced chemical vapor deposition system. The microstructural and luminescence properties of the samples are characterized after annealing at various temperatures. Under the onset crystallization temperature 800-900 degrees C, a strong subband infrared light emission in the range 1.1-1.8 mu m is observed at room temperature instead of the usually observed visible light emission. This subband infrared emission is gradually enhanced with the increase of phosphorus doping concentration, which can be ascribed to the increase of the luminescent defect states promoted by the doped phosphorous atoms.
Lightly boron and phosphorus co-doped silicon nanocrystals

Yeshi Ma,Xiaobo Chen,Xiaodong Pi,Deren Yang

DOI: https://doi.org/10.1007/s11051-012-0802-z

IF: 2.533

2012-01-01

Journal of Nanoparticle Research

Abstract:The co-doping of silicon nanocrystals (Si NCs) with boron (B) and phosphorus (P) is an important means to tune the optical properties of Si NCs. However, all the previous work only concerns heavy co-doping. In this study, we carry out first-principles study on light co-doping that leads to the incorporation of dopants at the NC surface, rather than inside NCs. The size (diameter) of Si NCs currently investigated is ~2.2 nm. A Si NC without doping is in the form of Si 179 H 148 . It is found that the formation energy of a lightly co-doped Si NC is between those of B- and P-doped Si NCs, hardly being affected by the distance between dopants. Electron localization around P is mainly responsible for the light co-doping-induced reduction of the bandgap of Si NCs. The redshifts of excitation- and emission-energy induced by light co-doping is slightly larger than those induced by B and P doping in most cases. The band-edge radiative recombination rates of undoped, B-doped, P-doped, and lightly co-doped Si NCs have been compared.
The Phosphorus and Boron Co-Doping Behaviors at Nanoscale in Si Nanocrystals/Sio2 Multilayers

Dongke Li,Yicheng Jiang,Pei Zhang,Dan Shan,Jun Xu,Wei Li,Kunji Chen

DOI: https://doi.org/10.1063/1.4984949

IF: 4

2017-01-01

Applied Physics Letters

Abstract:Phosphorus (P) and Boron (B) co-doping effects at the nanoscale in Si nanocrystals/SiO2 multilayers have been studied in the present work. Several interesting experimental results are achieved which are in contrast to the case in bulk-Si and the previous observations on the doped Si nanocrystals. It is found that all the co-doping samples are n-type regardless of B doping ratios. The P doping efficiency in Si NCs is higher than B dopants, and it can be improved via B co-doping with suitable levels. Raman and ESR spectra indicate that the different occupation preferences of P and B in Si NCs are responsible for the interesting co-doping behaviors. It looks like that the electronic structures and the physical properties of Si NCs can be modulated via the impurities co-doping approach.
First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

Junnan Han,Dongke Li,Teng Sun,Jiaming Chen,Yuhao Wang,Xiaodong Pi,Wei Li,Ling Xu,Jun Xu,Kunji Chen

DOI: https://doi.org/10.1088/1402-4896/acd08f

2023-01-01

Physica Scripta

Abstract:Doping in Si nanocrystals (Si NCs) is an interesting topic since the doping behaviors in the nanoscale are quite complicated compared with the case in bulk Si. In our present work, we use the first-principles calculation to study Phosphorus (P) or Boron (B) doping in Si NCs with the size of 2-8 nm embedded in SiO2 matrix by taking into account the existence of dangling bonds on the interfacial region. It is found that both P and B impurities tend to stay at the interfacial region to passivate the dangling bonds when the dot size is as small as 2 nm. However, P impurities exhibit the possibility to occupy the inner sites of Si NCs while B impurities are more difficult to be introduced into Si NCs due to the large formation energy. Our detailed study suggests that P or B impurities preferentially stay at the intermediate sites between Si and oxygen to form stable bonding configurations. With increasing the dot size from 2 nm to 8 nm, both P and B impurities can enter into the Si NCs more easily due to the relaxation of stress in the larger-sized Si NCs. Our theoretical results are in good agreement with the experimental observations.
Comparative study on the localized surface plasmon resonance of boron- and phosphorus-doped silicon nanocrystals.

Shu Zhou,Xiaodong Pi,Zhenyi Ni,Yi Ding,Yingying Jiang,Chuanhong Jin,Christophe Delerue,Deren Yang,Tomohiro Nozaki

DOI: https://doi.org/10.1021/nn505416r

IF: 17.1

2015-01-01

ACS Nano

Abstract:Localized surface plasmon resonance (LSPR) of doped Si nanocrystals (NCs) is critical to the development of Si-based plasmonics. We now experimentally show that LSPR can be obtained from both B- and P-doped Si NCs in the mid-infrared region. Both experiments and calculations demonstrate that the Drude model can be used to describe the LSPR of Si NCs if the dielectric screening and carrier effective mass of Si NCs are considered. When the doping levels of B and P are similar, the LSPR energy of B-doped Si NCs is higher than that of P-doped Si NCs because B is more efficiently activated to produce free carriers than P in Si NCs. We find that the plasmonic coupling between Si NCs is effectively blocked by oxide at the NC surface. The LSPR quality factors of B- and P-doped Si NCs approach those of traditional noble metal NCs. We demonstrate that LSPR is an effective means to gain physical insights on the electronic properties of doped Si NCs. The current work on the model semiconductor NCs, i.e., Si NCs has important implication for the physical understanding and practical use of semiconductor NC plasmonics.
Doping Efficiency, Dopant Location, and Oxidation of Si Nanocrystals

X. D. Pi,R. Gresback,R. W. Liptak,S. A. Campbell,U. Kortshagen

DOI: https://doi.org/10.1063/1.2897291

IF: 4

2008-01-01

Applied Physics Letters

Abstract:Gas-phase plasma-synthesized silicon nanocrystals (Si-NCs) are doped with boron (B) or phosphorous (P) during synthesis. The doping efficiency of B is smaller than that of P, consistent with the theoretical prediction of impurity formation energies. Despite vastly different synthesis conditions, the effect of doping on the photoluminescence (PL) of gas-phase-synthesized Si-NCs is qualitatively similar to that of Si-NCs doped during solid phase nucleation. Studies of oxidation-induced changes in PL and etching-induced changes in dopant concentration show that P resides at or near the Si-NC surface, while B is in the Si-NC cores. The oxidation of Si-NCs follows the Cabrera–Mott mechanism [N. Cabrera and N. F. Mott, Rep. Prog. Phys. 12, 163 (1948)].
Ab Initio Molecular Dynamics Simulation Study on Phosphorus/Boron Co-Doped Si Nanocrystals/SiO2 Core/Shell Structures

Junnan Han,Dongke Li,Jiaming Chen,Teng Sun,Yuhao Wang,Xiaodong Pi,Wei Li,Ling Xu,Jun Xu,Kunji Chen

DOI: https://doi.org/10.1021/acs.jpcc.3c04190

2023-01-01

Abstract:Co-doping in Si nanocrystals (Si NCs) is an intriguing research topic as the co-doping mechanism at the nanoscale is considerably more complex than the bulk Si. In this study, we utilized ab initio molecular dynamics simulations to investigate the impact of phosphorus (P) and boron (B) co-doping on the properties of Si NCs in the SiO2 matrix. Our findings demonstrate that P and B impurities exhibit a tendency to aggregate within sub-interfaces and interfacial regions. Furthermore, introducing B impurities during the co-doping process facilitates bonding between P and B near the interface to form P-B pairs. The results of ionic conductivity derived from the diffusion coefficient indicate that with increasing B concentration, the conductance activation energy first decreases before increasing, implying that the introduction of B impurity leads to greater bonding of P impurity to Si or B atoms. Vibrational simulations and bonding configurations on the structure reveal that P-B pair formation weakens the intensity of the vibrational density peak due to the P-B co-doping process, thereby stabilizing the structure.

Phosphorus Doping In Si Nanocrystals/Sio2 Multilayers And Light Emission With Wavelength Compatible For Optical Telecommunication (Vol 6, 22888, 2016)

Phosphorus Doping in Si Nanocrystals/SiO2 Multilayers and Light Emission with Wavelength Compatible for Optical Telecommunication.

Enhanced Subband Light Emission from Si Quantum Dots/sio2 Multilayers Via Phosphorus and Boron Co-Doping

Electroluminescence from Si Nanocrystal/c-Si Heterojunction Light-Emitting Diodes

Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation

Time-resolved and temperature-dependent photoluminescence study on phosphorus doped Si quantum dots/SiO 2 multilayers with ultra-small dot sizes

Doping Effect in Si Nanocrystals/SiO2 Multilayers

Phosphorus Doping Effect on Linear and Nonlinear Optical Properties of Si/SiO 2 Multilayers

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Doping silicon nanocrystals with boron and phosphorus

Modulation of Surface States by Phosphorus to Improve the Optical Properties of Ultra-Small Si Nanocrystals

Size-dependent Phosphorus Doping Effect in Nanocrystalline-Si-based Multilayers

Nonlinear Optical Absorption and Ultrafast Optical Response of Un-Doped and P-doped Nanocrystalline Si/SiO2 Multilayers

Doped Silicon Nanocrystals From Organic Dopant Precursor By A Sicl4-Based High Frequency Nonthermal Plasma

Subband Light Emission from Phosphorous-Doped Amorphous Si/Sio2 Multilayers at Room Temperature

Lightly boron and phosphorus co-doped silicon nanocrystals

The Phosphorus and Boron Co-Doping Behaviors at Nanoscale in Si Nanocrystals/Sio2 Multilayers

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

Comparative study on the localized surface plasmon resonance of boron- and phosphorus-doped silicon nanocrystals.

Doping Efficiency, Dopant Location, and Oxidation of Si Nanocrystals

Ab Initio Molecular Dynamics Simulation Study on Phosphorus/Boron Co-Doped Si Nanocrystals/SiO2 Core/Shell Structures