Abstract:InAs/GaAs quantum dots (QDs) and quantum dot molecules (QDMs) are self-assembled semiconductor nanostructures that can trap a single electron or hole with well-defined spin projections. QDs and QDMs have excellent optical properties and have long been of interest for incorporation into quantum optoelectronic devices ranging from single photon sources to multi-bit quantum computers. The properties of single QDs, or carriers confined within those QDs, can be tuned by external electric fields, which provides an important tool for the development of scalable and tunable devices. Deterministic charging of a QD with a single electron or hole is an important tool for quantum devices and is well-established under the application of growth-direction electric fields in a diode structure. Here, we report a new charging mechanism for a single QD in a 3-electrode device that does not contain a vertical diode and can be used to control electric field profiles in two dimensions. We fabricate the device with E-beam lithography and characterize photoluminescence from single QDs under different bias configurations. Using a combination of experimental data and COMSOL band structure calculations, we explain how the charging originates in the electrical-injection of holes induced by lateral electric fields. We discuss the applications for this device and the potential for full 2-D electric field control of a single QD and QDM.

The Charge Character in the Double-Barrier Quantum Dots in Well Hybrid Structure

Charge States and Transition of Double Quantum Dot in the Few-Electron Regime

A Charge Sensor Integration to Tunable Double Quantum Dots on Two Neighboring InAs Nanowires.

Charge detection of a quantum dot under different tunneling barrier symmetries and bias voltages

Charge sensing in enhancement mode double-top-gated metal-oxide-semiconductor quantum dots

Tuning the Charge States in InAs/GaSb or InAs/GaInSb Composite Quantum Wells by Persistent Photoconductivity

Charge states, triple points and quadruple points in an InAs nanowire triple quantum dot revealed by an integrated charge sensor

Charge State Readout And Hyperfine Interaction In A Few-Electron Ingaas Double Quantum Dot

Gate-Defined Double Quantum Dot With Integrated Charge Sensors Realized In Ingaas/Inp By Incorporating A High-Kappa Dielectric

Charging of a Single InAs QD with Electrically-Injected Holes using a Lateral Electric Field

Effects Of Charged Self-Assembled Quantum Dots On Two-Dimensional Quantum Transport

Selective Optical Charge Generation, Storage and Readout in a Single Self Assembled Quantum Dot

The Photocurrent of Resonant Tunneling Diode Controlled by the Charging Effects of Quantum Dots

Negative Electrochemical Capacitance for a Double-Quantum-dot Device

Influence of built-in charge on photogeneration and recombination processes in InAs/GaAs quantum dot solar cells

Fabrication And Characterization Of An Undoped Gaas/Algaas Quantum Dot Device

Charge Transfer Dynamics from Photoexcited Semiconductor Quantum Dots

Photoexcited carriers transfer properties in a doped double quantum dots photocell

Optically Induced Hysteresis of Bilateral P–i–n Junctions Incorporated with InAs Quantum Dots

CHARGING DYNAMICS OF Si-QUANTUM DOTS IN TUNNEL CAPACITOR

Quantum Confinement Tunable Ultrafast Charge Transfer in PbS Quantum Dots-WSe 2 0D-2D Hybrid Structure: transition from Weak to Strong Coupling Regime.