Abstract:Negative capacitance can be used to overcome the lower limit of subthreshold swing (SS) in field effect transistors (FETs), enabling ultralow-power microelectronics, though the concept of ferroelectric negative capacitance remains contentious. In this work, we analyze the negative capacitance in ferroelectric/dielectric heterostructure rigorously using Landau-Denvonshire theory, identifying three (one) critical dielectric thicknesses for first (second) order ferroelectric phase transition upon which the stability of negative capacitance changes. A critical electric window is also identified, beyond which the ferroelectric negative capacitance cannot be maintained. Between the first and second critical thicknesses, meta-stable negative capacitance exists near zero polarization, yet it will be lost and cannot be recovered when the electric window is broken. Between the second and third critical thicknesses, stable negative capacitance always exists near zero polarization within the electric window regardless of initial polar state, resulting in hysteretic double P-E loop. Beyond the third (first) critical thickness of first (second) order phase transition, P-E loop becomes hysteresis free, though the spontaneous polarization can still be induced at sufficient large electric field. Singularities in the effective dielectric constant is also observed at the critical thickness or electric field. The analysis demonstrates that the negative capacitance of ferroelectric can be stabilized by linear dielectric within a critical electric window, and the negative capacitance can be either hysteresis free or hysteretic for first order ferroelectrics, while it is always hysteresis free for the second order ferroelectrics.

Negative Electrochemical Capacitance for a Double-Quantum-dot Device

Room-temperature negative capacitance in a ferroelectric-dielectric superlattice heterostructure.

Negative Differential Capacitance of Quantum Dots

Correlated Electron Transport Through Parallel Double-Quantum-dot

Electron Transport Through A Double-Quantum-Dot Structure with Intradot and Interdot Coulomb Interactions

Readout of a Single Electron Spin in a Double Quantum Dot Using a Quantum Point Contact

Controllable Antiresonance and Low-Bias Negative Differential Conductance in T-shaped Double Dots with Electron-Phonon Interaction

Negative Capacitance in Light-Emitting Devices

Quantum Inductance And Negative Electrochemical Capacitance At Finite Frequency In A Two-Plate Quantum Capacitor

Double quantum dot with tunable coupling in an enhancement-mode silicon metal-oxide semiconductor device with lateral geometry

On the negative capacitance in ferroelectric heterostructures

Investigation of Negative Capacitance Effect from Domain Switching Dynamics

Bipolaronic blockade effect in quantum dots with negative charging energy

Charge sensing in enhancement mode double-top-gated metal-oxide-semiconductor quantum dots

A possible mechanism for the negative capacitance observed in organic devices

Measurements of capacitive coupling within a quadruple quantum dot array

Spatially resolved steady-state negative capacitance

Electric Field-Induced Permittivity Enhancement in Negative-Capacitance FET

A Carrier-Based Analytic Theory For Electrical Simulation Of Negative Capacitance Surrounding Gate Ferroelectric Capacitor

Field Effect Transistors: Ferroelectric Negative Capacitance Field Effect Transistor (Adv. Electron. Mater. 11/2018)

Wide-band capacitance measurement on a semiconductor double quantum dot for studying tunneling dynamics