Controllable Antiresonance and Low-Bias Negative Differential Conductance in T-shaped Double Dots with Electron-Phonon Interaction

Kai-Hua Yang,Hong-Wei Guo,Huai-Yu Wang,Zi-Jia Wei,Xiao-Hui Liang
DOI: https://doi.org/10.1016/j.physe.2024.116014
2024-01-01
Abstract:Controlling the quantum interference in nanoscaled systems has potential application for the realization of high-performance functional devices. In this work, the quantum interference of a T-shaped double-quantumdot system is studied in detail by evaluation of differential conductance by means of nonequilibrium Green's function method. The factors of Coulomb interaction in Luttinger liquid leads, electron-phonon interaction, interdot tunneling, and dot-lead coupling are taken into account. In the differential conductance curve, there appear a series of antiresonance dips due to phonon-assisted destructive interference when the interdot tunneling is weak, and they can coexist with zero-bias antiresonance dip. When the dot-lead couplings are asymmetric, both the antiresonance dip and Fano line shape dip can occur for strong dot-lead coupling. Our results also show the coexistence of low-bias negative differential conductance and Fano antiresonance, as a manifestation of the interplay between strong intralead Coulomb interaction and weak dot-lead coupling. These interference phenomena emerged in a relatively simple model promises helpful guidance for controlling over the electrical performance of interference-based molecular devices.
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